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PDF 2N3749 Data sheet ( Hoja de datos )
| Número de pieza | 2N3749 | |
| Descripción | NPN POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/315
Devices
2N2880
2N3749
Qualified Level
JAN
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TA = 250C (1)
@ TC = 1000C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 11.4 mW/0C for TA > 250C
2) Derate linearly 300 mW/0C for TC > 1000C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
Top, Tstg
Value
80
110
8.0
0.5
5.0
2.0
30
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Symbol
RθJC
Max.
3.33
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 µAdc
V(BR)CEO
V(BR)CBO
Emitter-Base Breakdown to Voltage
IE = 10 µAdc
V(BR)EBO
Collector-Emitter Cutoff Current
VCE = 60 Vdc
ICEO
Collector-Base Cutoff Current
VCB = 80 Vdc
ICBO
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE = -0.5
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
ICEX
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)620-2600 / Fax: (978) 689-0803
TO-59*
*See Appendix A for
Package Outline
Min. Max.
Unit
80 Vdc
110 Vdc
8.0 Vdc
20 µAdc
0.2 µAdc
1.0 µAdc
0.2 µAdc
111604
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3749.PDF ] | |
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