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PDF 40N03P Data sheet ( Hoja de datos )

Número de pieza 40N03P
Descripción SSM40N03P
Fabricantes Silicon Standard 
Logotipo Silicon Standard Logotipo

40N03P datasheet


1. - SSM40N03P, 30V, 40A, MOSFET






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No Preview Available ! 40N03P Hoja de datos, Descripción, Manual

SSM40N03P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate charge
Simple drive requirement
Fast switching
Description
G
DS
TO-220
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial and
industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits.
BVDSS
R DS(ON)
ID
G
30V
17m
40A
D
S
Absolute Maximum Ratings
Symbol
Parameter
Vwww.DataSheet4U.com
DS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
30
± 20
40
30
169
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Max.
Value
2.5
62
Unit
°C/W
°C/W
Rev.2.01 7/01/2004
www.SiliconStandard.com
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40N03P pdf
SSM40N03P
16
Id=20A
14
V D =16V
12 V D =20V
V D =24V
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000 Ciss
Coss
Crss
100
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10 T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.01 7/01/2004
www.SiliconStandard.com
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