PDF FSAB20PH60 Data sheet ( Hoja de datos )

Número de pieza	FSAB20PH60
Descripción	Smart Power Module
Fabricantes	Fairchild Semiconductor
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No Preview Available ! September 2006 FSAB20PH60 Smart Power Module for Partial Switching Converter Features • Very low thermal resistance due to using DBC • 600V-20A single-phase rectifier bridge diode including two IGBTs for partial switching converter • Integrated IC for gate driving and protection • Divided negative dc-link terminals for current sensing • Isolation rating of 2500Vrms/min. Applications • AC 187V ~ 276V single-phase partial-switching converter of air-conditioner General Description FSAB20PH60 is an advanced smart power module of PSC(Par- tial Switching Converter) that Fairchild has newly developed and designed mainly targeting low-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and short- circuit protection function. Top View 44mm Bottom View 26.8mm Figure 1. ©2006 Fairchild Semiconductor Corporation FSAB20PH60 Rev. A 1 www.fairchildsemi.com 1 page Absolute Maximum Ratings Thermal Resistance Symbol Parameter Conditions Min. Typ. Max. Units Rth(j-c)Q Rth(j-c)D Junction to Case Thermal Each IGBT under Operating Condition Resistance Each Diode under Operating Condition - - 2.8 °C/W - - 2.6 °C/W Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Main Circuit Part Symbol Item Conditions Min. Typ. Max. Units VCE(SAT) VFM tON tC(ON) tOFF tC(OFF) trr ICES Collector-Emitter Saturation Voltage Diode Forward Voltage Switching Times VCC = VBS =15V VIN = 5V IC = 6.5A, TJ = 25°C VIN = 0V IC = 20A, TJ = 25°C VPN = 300V, VCC = VBS = 15V IC = 6.5A VIN = 0V ↔ 5V, Inductive Load (Note 3) Collector - Emitter Leakage Current VCE = VCES - - - - - - - - 2.1 2.6 1.1 0.48 0.85 0.56 0.10 1.35 - 1.5 - - - - - 250 V V µs µs µs µs µs µA IR Diode Leakage Current VR = VRRM - - 250 µA Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% IC 120% IC trr VCE IC IC VCE VIN VIN tON tC(ON) VIN(ON) 10% IC 90% IC 10% VCE tOFF VIN(OFF) tC(OFF) 10% VCE 10% IC Figure 4. Switching Time Definition FSAB20PH60 Rev. A 5 www.fairchildsemi.com 5 Page CPU 5V-Line 4.7kΩ 100 Ω 1nF 1nF PSC Module VFO COM Note: 1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 3.3kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input is compatible with standard CMOS or LSTTL outputs. Figure 9. Recommended CPU I/O Interface Circuit R-T Graph 120 100 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [°C] Figure 10. R-T Curve of the Built-in Thermistor FSAB20PH60 Rev. A 11 www.fairchildsemi.com 11 Page

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