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PDF US6K2 Data sheet ( Hoja de datos )
| Número de pieza | US6K2 | |
| Descripción | 4V Drive Nch+Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
4V Drive Nch+Nch MOSFET
US6K2
US6K2
zStructure
Silicon N-channel MOSFET
zFeatures
1) Two Nch MOSFETs are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) 4V drive.
zApplications
Switching
zDimensions (Unit : mm)
TUMT6
2.0
1.3
0.65 0.65
(6) (5) (4)
0.85Max.
0.77
0~0.1
(1) (2) (3)
0.3
0.17
Abbreviated symbol : K02
zPackaging specifications
Type
US6K2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Total power dissipation
PD ∗2
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tch
Tstg
zInner circuit
(6) (5)
(4)
∗1
∗2
∗2
∗1
(1) Tr1 Source
(2) Tr1 Gate
(1) (2)
(3) Tr2 Drain
(3) (4) Tr2 Source
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 Gate
(6) Tr1 Drain
Limits
30
20
±1.4
±5.6
0.6
5.6
1.0
0.7
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
Rev.A
1/3
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet US6K2.PDF ] | |
Hoja de datos destacado
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