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PDF IRLI3103 Data sheet ( Hoja de datos )

Número de pieza IRLI3103
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRLI3103 Hoja de datos, Descripción, Manual

PRELIMINARY
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
PD 9.1377
IRLI3103
HEXFET® Power MOSFET
VDSS = 30V
RDS(on) = 0.014
ID = 38A
Max.
38
27
220
38
0.25
± 20
240
34
3.8
2.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
4.0
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W

1 page




IRLI3103 pdf
IRLI3103
VDS
RD
40
VGS D.U.T.
RG
VDD
30
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
0A
25 50 75 100 125 150 175
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
N otes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PD M x Z thJC + T C
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10

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