DataSheet.es    


PDF IRLI2203N Data sheet ( Hoja de datos )

Número de pieza IRLI2203N
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRLI2203N (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IRLI2203N Hoja de datos, Descripción, Manual

PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 9.1378A
IRLI2203N
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 0.007
ID = 61A
S
TO-220 FULLPAK
Max.
61
43
400
47
0.31
± 16
390
60
4.7
1.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
3.2
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/1/96

1 page




IRLI2203N pdf
IRLI2203N
70
60
50
40
30
20
10
0A
25 50 75 100 125 150 175
TC , C ase T em perature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0 .5 0
1
0 .2 0
0 .1 0
0.05
0.1 0.02
0 .01
0.01
0.00001
S IN G L E P U L S E
(T HE R M AL R E SPO N SE )
0.0001
PDM
No te s:
1 . Du ty fa ctor D = t1 / t 2
t1
t2
2. P eak TJ = P D M x Z thJ C + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duratio n (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
100

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IRLI2203N.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRLI2203GPower MOSFET ( Transistor )International Rectifier
International Rectifier
IRLI2203NPower MOSFET ( Transistor )International Rectifier
International Rectifier
IRLI2203NPBFPower MOSFET ( Transistor )International Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar