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Número de pieza | IRGS8B60K | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRGS8B60K (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
VCES = 600V
IC = 20A, TC=100°C
tsc>10µs, TJ=150°C
VCE(on) typ. = 1.8V
TO-220AB
IRGB8B60K
D2Pak
IRGS8B60K
TO-262
IRGSL8B60K
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Max.
600
28
19
56
56
±20
167
83
-55 to +175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
dJunction-to-Ambient, typical socket mount
eJunction-to-Ambient (PCB Mount, Steady State)
Weight
www.irf.com
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.90
–––
62
40
–––
Units
°C/W
g
1
10/16/03
1 page 20
18
16
14
12
10
8
6
4
2
0
5
ICE = 4.0A
ICE = 8.0A
ICE = 16A
10 15
VGE (V)
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
20
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 4.0A
ICE = 8.0A
ICE = 16A
10 15
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
20
IRGB/S/SL8B60K
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 4.0A
ICE = 8.0A
ICE = 16A
10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
20
100
80
TJ = 25°C
60 TJ = 150°C
40
20 TJ = 150°C
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 11 - Typ. Transfer Characteristics
VCE = 360V; tp = 10µs
5
5 Page D2Pak Package Outline
IRGB/S/SL8B60K
D2Pak Part Marking Information
THIS IS AN IRF530S WIT H
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN THE ASS EMBLY LINE "L"
INT ERNATIONAL
RE CT IF IE R
LOGO
www.irf.com
AS S EMBLY
LOT CODE
F 530S
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
11
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet IRGS8B60K.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRGS8B60K | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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