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PDF IRGS10B60KD Data sheet ( Hoja de datos )
| Número de pieza | IRGS10B60KD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
VCES = 600V
IC = 12A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
Max.
600
22
12
44
44
22
10
44
± 20
156
62
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.8
3.4
–––
62
40
–––
Units
°C/W
g
1
8/18/04
1 page  
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 5.0A
ICE = 10A
ICE = 15A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRG/B/S/SL10B60KD
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 5.0A
ICE = 10A
ICE = 15A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 5.0A
ICE = 10A
ICE = 15A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
80
70 TJ = 25°C
TJ = 150°C
60
50
40
30
20 TJ = 150°C
10
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
600 12
500 10
400 8
90% ICE
300
tf
6
200 4
5% VCE
100
5% ICE
2
00
-100
-0.20
0.00
Eoff Loss
0.20 0.40
time(µs)
0.60
-2
0.80
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
100
0
-100
-200
-300
-400
Peak
IRR
QRR
tRR
10%
Peak
IRR
15
10
5
0
-5
-10
-500
-15
-600
-0.15 -0.05
0.05
0.15
-20
0.25
time (µS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
www.irf.com
IRG/B/S/SL10B60KD
600 30
500 25
400 20
TEST CURRENT
300 15
90% test current
200 10
10% test current
tr
100
5% VCE 5
0
-100
15.90
Eon Loss
16.00
16.10
time (µs)
0
-5
16.20
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400
VCE
350
100
300
ICE
250
200 50
150
100
50
0
-5.00
0.00 5.00 10.00
time (µS)
0
15.00
Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.3
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IRGS10B60KD.PDF ] | |
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