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PDF IRG4PSH71U Data sheet ( Hoja de datos )
| Número de pieza | IRG4PSH71U | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 91685
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSH71U
UltraFast Speed IGBT
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
C
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.50V
@VGE = 15V, IC = 50A
SUPER - 247
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
ÃPulse Collector Current
dClamped Inductive Load current
VGE
EARV
PD @ TC = 25°C
gGate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RθJC
RθCS
RθJA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Wt Weight
www.irf.com
Max.
1200
99
50
200
200
±20
150
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
mJ
W
°C
Min.
–––
–––
–––
20 (2.0)
–––
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.36
–––
38
–––
Units
°C/W
N (kgf)
g (oz.)
1
5/24/04
1 page  
IRG4PSH71U
14000
12000
10000
8000
VGE = 0V, f = 1 MHZ
Cies = C ge + Cgc, C ce
Cres = C gc
Coes = Cce + Cgc
Cies
SHORTED
6000
4000
2000
Coes
Cres
0
1
10 100 1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
IC = 70A
16
12
8
4
0
0
100 200 300 400
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
25
VCC = 960V
VGE = 15V
TJ = 25°C
20 I C = 70A
15
1000
100
RG = 5.0Ω
VGE = 15V
VCC = 960V
10
IC = 140A
IC = 70A
IC = 35A
10
0
10 20 30
RG, Gate Resistance (Ω)
40
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4PSH71U.PDF ] | |
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