|
|
PDF IRG4PSC71K Data sheet ( Hoja de datos )
| Número de pieza | IRG4PSC71K | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRG4PSC71K (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
PD - 91683A
PRELIMINARY
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSC71K
Short Circuit Rated
UltraFast IGBT
Features
• Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
• High abort circuit rating IGBTs, optimized for
motorcontrol
• Minimum switching losses combined with low
conduction losses
• Tightest parameter distribution
• Creepage distance increased to 5.35mm
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.83V
@VGE = 15V, IC = 60A
Benefits
• Highest current rating IGBT
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tSC
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance\ Mechanical
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
SUPER - 247
Max.
600
85
60
200
200
10
± 20
180
350
140
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
µs
V
mJ
W
°C
Min.
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/11/99
1 page  
IRG4PSC71K
10000
8000
6000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
4000
2000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 60A
16
12
8
4
0
0 100 200 300 400
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
12.0
VCC = 480V
VGE = 15V
10.0
TJ
IC
= 25 °C
= 60A
8.0
6.0
4.0
2.0
0.0
0
10 20 30 40
RG , Gate Resistance ( Ω )
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100 RG = 5.0OΩhm
VGE = 15V
VCC = 480V
10
1
IC = 120A
IC = 60A
IC = 30A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4PSC71K.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRG4PSC71K | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| IRG4PSC71KD | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| IRG4PSC71KDPBF | INSUKATED GATEBIPOLAR TRANSISTOR | International Rectifier |
| IRG4PSC71U | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |