PDF IRG4PC30UDPBF Data sheet ( Hoja de datos )

Número de pieza	IRG4PC30UDPBF
Descripción	INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes	International Rectifier
Logotipo
Hay una vista previa y un enlace de descarga de IRG4PC30UDPBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas
No Preview Available ! PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free G E n-channel VCES = 600V VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings TO-247AC VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Thermal Resistance RθJC RθJC RθCS RθJA Wt Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight www.irf.com Max. 600 23 12 92 92 12 92 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W °C Min. ------ ------ ------ ----- ------ Typ. ------ ------ 0.24 ----- 6 (0.21) Max. 1.2 2.5 ------ 40 ------ Units °C/W g (oz) 1 6/1/04 1 page 2000 V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc 1600 Coes = C ce + C gc Cies 1200 800 Coes 400 Cres 0A 1 10 100 VCE, Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage IRG4PC30UDPbF 20 VCE = 400V IC = 12A 16 12 8 4 0A 0 10 20 30 40 50 Qg , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.60 VCC = 480V VGE = 15V T J = 25°C 0.58 I C = 12A 0.56 0.54 0.52 0.50 0 10 20 30 40 50 R G, Gate Resistance ( Ω) A 60 Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 RG = 23Ω V GE = 15V V CC = 480V 1 I C = 24A I C = 12A I C = 6.0A 0.1 A -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 5 Page

Páginas	Total 10 Páginas
PDF Descargar	[ Datasheet IRG4PC30UDPBF.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
IRG4PC30UDPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar