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Número de pieza | IRG4BC30KD-SPBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRG4BC30KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
SOFT RECOVERY DIODE
Features
C
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
Combines low conduction losses with high switching
speed
tighter parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
Lead-Free
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
Benefits
Latest generation 4 IGBTs offer highest power
density motor controls possible
HEXFREDTM diodes optimized for performance with
IGBTs. Minimized recovery characteristic reduce noise,
EMI and switching losses
This part replaces the IRGBC30KD2-S and
IRGBC30MD2-S products
For hints see design tip 97003
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)
Weight
D 2 Pak
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Typ.
0.5
1.44
Max.
1.2
2.5
40
Units
V
A
µs
V
W
°C
Units
°C/W
g
1
8/11/04
1 page 1500
1200
900
VGE = 0V, f = 1MHz
CCCiroeeesss
=
=
=
CCCggceec
+
+
Cgc
Cgc
,
Cce
SHORTED
Cies
600
300
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC30KD-SPbF
20 VCC = 400V
I C = 16A
16
12
8
4
0
0 20 40 60 80
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.50 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
1.40 IC = 16A
1.30
1.20
1.10
1.00
0
10 20 30 40
RGRG, ,GGaattee RReesistannccee ((OΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = O23hΩm
VGE = 15V
VCC = 480V
1
IC = 32A
IC = 16A
IC = 88.0AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRG4BC30KD-SPBF.PDF ] |
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