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PDF IRFPS38N60LPBF Data sheet ( Hoja de datos )

Número de pieza IRFPS38N60LPBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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SMPS MOSFET
PD - 95701
IRFPS38N60LPbF
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 120m170ns 38A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
SUPER TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
38
24
150
540
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
4.3
±30
13
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 38
MOSFET symbol
D
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 150
––– ––– 1.5
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 38A, VGS = 0V
S
ftrr Reverse Recovery Time
––– 170 250 ns TJ = 25°C, IF = 38A
––– 420 630
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 830 1240 nC TJ = 25°C, IS = 38A, VGS = 0V
f––– 2600 3900
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 9.1 14 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
9/10/04

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IRFPS38N60LPBF pdf
IRFPS38N60LPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
40
35
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
Fig 10. Maximum Drain Current vs.
Case Temperature
150
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
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