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PDF IRFPS29N60L Data sheet ( Hoja de datos )

Número de pieza IRFPS29N60L
Descripción SMPS MOSFET
Fabricantes International Rectifier 
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No Preview Available ! IRFPS29N60L Hoja de datos, Descripción, Manual

PD - 94622
SMPS MOSFET IRFPS29N60L
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 175m130ns 29A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
29
18
110
480
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.8
±30
12
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 29
MOSFET symbol
(Body Diode)
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM
ton
www.irf.com
Reverse Recovery Current
Forward Turn-On Time
A showing the
––– ––– 110
integral reverse
––– ––– 1.5
fp-n junction diode.
V TJ = 25°C, IS = 29A, VGS = 0V
––– 130 190 ns TJ = 25°C, IF = 29A
f––– 240 360
TJ = 125°C, di/dt = 100A/µs
f––– 630 950 nC TJ = 25°C, IS = 29A, VGS = 0V
f––– 1820 2720
TJ = 125°C, di/dt = 100A/µs
––– 9.4 14 A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
2/6/03

1 page




IRFPS29N60L pdf
IRFPS29N60L
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 10. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
www.irf.com
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