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PDF IRFI4227PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFI4227PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PDP SWITCH
PD - 97036A
IRFI4227PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l150°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
200
VDS (Avalanche) typ.
240
RDS(ON) typ. @ 10V
21
IRP max @ TC= 100°C
TJ max
47
150
DD
V
V
m:
A
°C
G
S
D
G
S TO-220AB Full-Pak
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case f
Junction-to-Ambient f
Notes through
are on page 8
www.irf.com
Max.
±30
26
17
100
47
46
18
0.37
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
–––
Max.
2.73
65
Units
V
A
W
W/°C
°C
N
Units
1
10/12/05
1 page  
0.16
ID = 17A
0.12
0.08
TJ = 125°C
0.04
0.00
5
TJ = 25°C
6789
VGS, Gate-to-Source Voltage (V)
10
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.5
4.0 ID = 250µA
3.5
3.0
2.5
2.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
10
IRFI4227PbF
240
ID
200
TOP 2.5A
3.0A
BOTTOM 16A
160
120
80
40
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
80
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
60 Square Pulse
40
20
0
25
50 75 100 125
Case Temperature (°C)
150
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
1
0.20
0.10
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.44978 0.000177
τ3τ3 0.9085 0.105329
1.3717 2.0127
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFI4227PBF.PDF ] | |
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