|
|
PDF IRFI4229PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFI4229PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFI4229PBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
PDP SWITCH
PD - 97201
IRFI4229PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l150°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
250
300
38
32
150
DD
V
V
m:
A
°C
G
S
D
G
S TO-220AB Full-Pak
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case f
Junction-to-Ambient f
Notes through
are on page 8
www.irf.com
Max.
±30
19
12
72
32
46
18
0.37
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
–––
Max.
2.73
65
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
04/07/06
1 page  
200
180 ID = 11A
160
140
120
100 TJ = 125°C
80
60 TJ = 25°C
40
20
0
5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance vs. Gate Voltage
5.0
4.0
ID = 250µA
IRFI4229PbF
450
400
TOP
ID
2.3A
350 2.7A
BOTTOM 11A
300
250
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
60
ton= 1µs
50
Duty cycle = 0.25
Half Sine Wave
Square Pulse
40
30
3.0 20
10
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
10
0
25 50 75 100 125 150
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.3671 0.000287
τ3τ3 1.0580 0.162897
1.3076 2.426
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1 10 100
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFI4229PBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFI4229PBF | HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |