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PDF IRF8910PBF Data sheet ( Hoja de datos )

Número de pieza IRF8910PBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD -95673
IRF8910PbF
Applications
l Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
l Lead-Free
VDSS
20V
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
S1
G1
S2
G2
HEXFET® Power MOSFET
RDS(on) max
ID
:13.4m @VGS = 10V 10A
1 8 D1
2 7 D1
3 6 D2
4 5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
20
± 20
10
8.3
82
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
8/11/04

1 page




IRF8910PBF pdf
10
9
8
7
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
IRF8910PbF
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
Ri (°C/W) τi (sec)
R1R1
R2R2
R3R3
R4R4
R5R5
1.2647
0.000091
τJ τJ
τ1 τ1
τCτC 2.0415
0.000776
τ2 τ2
τ3τ3
τ4 τ4
τ5 τ5
18.970 0.188739
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iτ=iRi/iRi
Notes:
23.415
16.803
0.757700
25.10000
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
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