DataSheet.es    


PDF FCH47N60F Data sheet ( Hoja de datos )

Número de pieza FCH47N60F
Descripción 600V N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de FCH47N60F (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! FCH47N60F Hoja de datos, Descripción, Manual

FCH47N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.062Ω
• Fast Recovery Type ( trr = 240ns)
• Ultra Low Gate Charge (typ. Qg = 210nC)
• Low Effective Output Capacitance (typ. Cosseff. = 420pF)
• 100% avalanche tested
May 2006
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
www.DataSheet4U.com
GD S
TO-247
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FCH47N60F Rev. B
1
G
S
FCH47N60F
600
47
29.7
141
± 30
1800
47
41.7
50
417
3.33
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ.
--
0.24
--
Max.
0.3
--
41.7
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com

1 page




FCH47N60F pdf
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
FCH47N60F Rev. B

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet FCH47N60F.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
FCH47N60N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor
FCH47N60F600V N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor
FCH47N60NN-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor
FCH47N60NFMOSFET ( Transistor )Fairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar