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PDF XR1005-QD Data sheet ( Hoja de datos )
| Número de pieza | XR1005-QD | |
| Descripción | GaAs Receiver | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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19.0-26.0 GHz GaAs Receiver
QFN, 7x7 mm
April 2006 - Rev 10-Apr-06
Features
Sub-harmonic Receiver
Integrated LNA, LO Buffer, Image Reject Mixer
7x7 mm, QFN
+2.0 dBm LO Drive Level
3.0 dB Noise Figure
20.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
General Description
Mimix Broadband’s 19.0-26.0 GHz GaAs packaged receiver has a
noise figure of 3.0 dB and 20.0 dB image rejection across the band.
This device is a two stage balanced LNA followed by an image reject
sub-harmonic anti-parallel diode mixer and includes an integrated
LO buffer amplifer.The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. The use of a sub-harmonic mixer makes the provision of
the LO easier than for fundamental mixers at these frequencies. I and
Q mixer outputs are provided and an external 90 degree hybrid is
required to select the desired sideband. This device uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability
and uniformity.The device comes in a 7x7 mm QFN Surface Mount
Laminate Package offering excellent RF and thermal properties and
www.DataSheet4U.com is RoHS compliant. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
R1005-QD
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+4.5 VDC
180, 165 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 19.0 - 26.0
Frequency Range (RF) Lower Side Band
GHz 19.0 - 26.0
Frequency Range (LO)
GHz 8.0
- 14.5
Frequency Range (IF)
GHz DC - 3.0
Input Return Loss RF (S11)
dB - 12.0 -
Small Signal Conversion Gain RF/IF (S21)2
dB - 8.0 -
LO Input Drive (PLO)
dBm - +2.0 -
Image Rejection2
dBc - 20.0 -
Noise Figure (NF)2
dB - 3.0 -
Isolation LO/RF @ LOx1/LOx2
dB - 40.0 -
Input Third Order Intercept (IIP3)1,2
dBm - -7.0 -
Drain Bias Voltage (Vd1)
VDC - +4.0 +4.5
Drain Bias Voltage (Vd2)
VDC - +4.0 +4.5
Gate Bias Voltage (Vg1,2)
VDC -1.2 -0.3 +0.1
Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)
mA - 130 155
Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)
mA - 116 140
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
19.0-26.0 GHz GaAs Receiver
QFN, 7x7 mm
April 2006 - Rev 10-Apr-06
R1005-QD
App Note [1] Biasing - The device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=130mA and
Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF power and
temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value
resistor in series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct
drain current and thus drain voltage.The typical gate voltage needed to do this is -0.3V.Typically the gate is protected
with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate
bias is available before applying the positive drain supply.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W E+ E+
C/W E+ E+
C/W E+ E+
Bias Conditions: Vd1=4.0V, Vd2=4.0V, Id1=130 mA, Id2=116 mA
Typical Application
XR1005-QD
RF IN
21.2-23.6 GHz
LNA
IR Mixer
Coupler
BPF
IF Out
2 GHz
AGC Control
LO(+2.0dBm)
9.6-10.8 GHz (USB Operation)
11.6-12.8 GHz (LSB Operation)
Mimix Broadband MMIC-based 19.0-26.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 26.0 GHz)
Mimix Broadband's 19.0-26.0 GHz XR1005-QD GaAs Receiver can be used in saturated radio applications and linear modulation schemes up
to 16 QAM.The receiver can be used in upper and lower sideband applications from 19.0-26.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
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