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PDF XR1005 Data sheet ( Hoja de datos )
| Número de pieza | XR1005 | |
| Descripción | GaAs MMIC Receiver | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de XR1005 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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19.0-26.0 GHz GaAs MMIC
Receiver
April 2006 - Rev 10-Apr-06
Features
Sub-harmonic Receiver
Integrated LNA, LO Buffer, Image Reject Mixer
+2.0 dBm LO Drive Level
2.3 dB Noise Figure
20.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
R1005
General Description
Mimix Broadband’s 19.0-26.0 GHz GaAs MMIC receiver has a noise
figure of 2.5 dB and 20.0 dB image rejection across the band.This
device is a two stage balanced LNA followed by an image reject
sub-harmonic anti-parallel diode mixer and includes an integrated LO
buffer amplifer.The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. The use of a sub-harmonic mixer makes the provision of
the LO easier than for fundamental mixers at these frequencies. I and Q
mixer outputs are provided and an external 90 degree hybrid is
required to select the desired sideband. This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability
and uniformity.The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold metallization to allow
www.DataSheet4U.com either a conductive epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+4.5 VDC
180, 165 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 19.0 - 26.0
Frequency Range (RF) Lower Side Band
GHz 19.0 - 26.0
Frequency Range (LO)
GHz 8.0
- 14.5
Frequency Range (IF)
GHz DC - 3.0
Input Return Loss RF (S11)3
dB - 20.0 -12.0
Small Signal Conversion Gain RF/IF (S21)2,3
dB 7.5 9.5 12.0
LO Input Drive (PLO)
dBm - +2.0 -
Image Rejection2,3
dBc 15.0 20.0
-
Noise Figure (NF)2,3
dB - 2.3 2.9
Isolation LO/RF @ LOx1/LOx2
dB - 65.0 -
Input Third Order Intercept (IIP3)1,2
dBm - -7.0 -
Drain Bias Voltage (Vd1)
VDC - +4.0 +4.5
Drain Bias Voltage (Vd2)
VDC - +4.0 +4.5
Gate Bias Voltage (Vg1,2)
VDC -1.2 -0.3 +0.1
Supply Current (Id1) (Vd1=3.5V, Vg=-0.3V Typical)
mA - 130 155
Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)
mA - 116 140
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
(3) Max and Min are specified for RF=20 to 24 GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
19.0-26.0 GHz GaAs MMIC
Receiver
April 2006 - Rev 10-Apr-06
Mechanical Drawing
1.945
(0.077)
1.678
(0.066)
2
1.608
(0.063)
1
2.478
(0.098)
3
3.278
(0.129)
4
R1005
5
1.488
(0.059)
0.0
0.0
10 9 8 7
1.678
(0.066)
2.478
(0.098)
3.077
(0.121)
3.278
(0.129)
(Note: Engineering designator is 22REC0393)
6
3.677 3.970
(0.145) (0.156)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.787 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (IF1)
Bond Pad #4 (Vd2)
Bond Pad #5 (LO)
Bond Pad #7 (Vg2) Bond Pad #9 (IF2)
Bond Pad #6 (Vg2b) Bond Pad #8 (Vg2a) Bond Pad #10 (Vg1)
Bias Arrangement
Bypass Capacitors - See App Note [2]
Vd1
RF 1
IF1
23 4
Vd2
5 LO
Vd2
Vd1
IF1
RF
XR1005
LO
Vg1
10
9
87
6
IF2
Vg2
Vg1 Vg2
IF2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 9
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet XR1005.PDF ] | |
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