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PDF XR1002-BD Data sheet ( Hoja de datos )
| Número de pieza | XR1002-BD | |
| Descripción | GaAs MMIC Receiver | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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17.65-33.65 GHz GaAs MMIC
Receiver
April 2007 - Rev 05-Apr-07
Features
Fundamental High Dynamic Range Receiver
Integrated Gain Control
+4.0 dBm Input Third Order Intercept (IIP3)
13.0 dB Conversion Gain
3.0 dB Noise Figure
25.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
R1002-BD
Chip Device Layout
General Description
Mimix Broadband’s 17.65-33.65 GHz GaAs MMIC receiver has a 12.0 dB
R1002
gain control range, a noise figure of 3.0 dB and 25.0 dB image rejection
across the band.This device is a three stage LNA followed by a single
transistor "Tee" attenuator and an image reject fundamental resistive
Absolute Maximum Ratings
HEMT mixer. At high signal levels the radio AGC system can be used to
reduce the receiver gain improving the IIP3 providing for minimum
distortion at modulation schemes as high as 256 QAM (ETSI-see
Technical Note 1).The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. I and Q mixer outputs are provided and an external 90 degree
hybrid is required to select the desired sideband.This MMIC uses Mimix
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
+6.0 VDC
300 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table3
Broadband’s 0.15 µm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability and
www.DataSheet4U.com uniformity. The chip has surface passivation to protect and provide a
rugged part with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach process.This
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
Channel Temperature (Tch) MTTF Table3
(1) Measured using constant current, 10dB attenuation and
-20dBm total input power.
(2) At minimum attenuation.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
SATCOM and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 17.65 - 33.65
Frequency Range (RF) Lower Side Band
GHZ 17.65 - 33.65
Frequency Range (LO)
GHz 13.65 - 37.65
Frequency Range (IF)
GHz DC - 4.0
Input Return Loss RF (S11)
dB - 10.0 -
Small Signal Conversion Gain RF/IF (S21)
dB 9.5 13.0 -
Attenuation
dB 0.0
- 12.0
LO Input Drive (PLO)
dBm +12.0 +15.0 +18.0
Image Rejection
dBc 15.0 25.0
-
Noise Figure (NF)
dB - 3.0 3.7
Isolation LO/RF
dB - 40.0 -
Input Third Order Intercept (IIP3)
dBm - +4.0 -
Drain Bias Voltage (Vd1,2)
VDC - +4.5 +5.5
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)
VDC -1.0 -0.5 0.0
Control Bias Voltage (Vg3)
VDC -1.5 -1.2 0.0
Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)
mA - 135 270
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
17.65-33.65 GHz GaAs MMIC
Receiver
April 2007 - Rev 05-Apr-07
Mechanical Drawing 0.897
(0.035)
1.496
(0.059)
1.895
(0.075)
2.000
(0.079)
3 45
1.397
(0.055)
2
R1002-BD
6
1.600
(0.063)
7
1.000
(0.039)
0.399
(0.016)
1
10 9 8 R1002
0.0
0.0
0.897
(0.035)
1.496
(0.059)
1.895
(0.075)
3.350
(0.132)
(Note: Engineering designator is 30KRP_03A)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.152 mg.
Bond Pad #1 (Vg1)
Bond Pad #2 (RF)
Bond Pad #3 (Vd1)
Bond Pad #4 (Vd2)
Bond Pad #5 (IF1)
Bond Pad #6 (Vg4)
Bond Pad #7 (LO)
Bond Pad #8 (IF2)
Bond Pad #9 (Vg3)
Bond Pad #10 (Vg2)
Bias Arrangement
Vd1,2
IF1
3 45
RF 2
6 Vg4
7 LO
Bypass Capacitors - See App Note [2]
Vd1,2
Vg4
IF1
RF
LO
1
Vg1,2
10 9 8 R1002
IF2
Vg3
Vg1,2
Vg3
IF2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 10
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet XR1002-BD.PDF ] | |
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