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PDF XR1002 Data sheet ( Hoja de datos )

Número de pieza XR1002
Descripción GaAs MMIC Receiver
Fabricantes Mimix Broadband 
Logotipo Mimix Broadband Logotipo



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No Preview Available ! XR1002 Hoja de datos, Descripción, Manual

18.0-34.0 GHz GaAs MMIC
Receiver
May 2006 - Rev 21-May-06
Features
Fundamental High Dynamic Range Receiver
Integrated Gain Control
+4.0 dBm Input Third Order Intercept (IIP3)
14.0 dB Conversion Gain
3.0 dB Noise Figure
25.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
R1002
General Description
Mimix Broadband’s 18.0-34.0 GHz GaAs MMIC receiver has a 12.0 dB gain
control range, a noise figure of 3.0 dB and 25.0 dB image rejection across
the band.This device is a three stage LNA followed by a single transistor
"Tee" attenuator and an image reject fundamental resistive HEMT mixer.
At high signal levels the radio AGC system can be used to reduce the
receiver gain improving the IIP3 providing for minimum distortion at
modulation schemes as high as 256 QAM (ETSI-see Technical Note 1).
The image reject mixer eliminates the need for a bandpass filter after the
LNA to remove thermal noise at the image frequency. I and Q mixer
outputs are provided and an external 90 degree hybrid is required to
select the desired sideband.This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity.The chip
www.DataSheet4U.com has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
R1002
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
300 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(1) Measured using constant current, 10dB attenuation and
-20dBm total input power.
(2) At minimum attenuation.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 18.0 - 34.0
Frequency Range (RF) Lower Side Band
GHZ 18.0 - 34.0
Frequency Range (LO)
GHz 14.0 - 38.0
Frequency Range (IF)
GHz DC - 4.0
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21) 2
dB - 10.0
dB 11.0 14.0
-
-
Attenuation
dB 0.0
- 12.0
LO Input Drive (PLO)
dBm +12.0 +15.0 +18.0
Image Rejection
dBc 15.0 25.0
-
Noise Figure (NF)
dB - 3.0 3.7
Isolation LO/RF
Input Third Order Intercept (IIP3)1
dB - 40.0 -
dBm - +4.0 -
Drain Bias Voltage (Vd1,2)
VDC - +4.5 +5.5
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)
VDC -1.0 -0.5 0.0
Control Bias Voltage (Vg3)
VDC -1.5 -1.2 0.0
Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)
mA - 135 270
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

1 page




XR1002 pdf
18.0-34.0 GHz GaAs MMIC
Receiver
May 2006 - Rev 21-May-06
Mechanical Drawing 0.897
(0.035)
1.496
(0.059)
2.000
(0.079)
34
1.895
(0.075)
5
1.397
(0.055)
2
R1002
6
1.600
(0.063)
7
1.000
(0.039)
0.399
(0.016)
1
10 9 8 R1002
0.0
0.0
0.897
(0.035)
1.496
(0.059)
1.895
(0.075)
3.350
(0.132)
(Note: Engineering designator is 30KRP_03A)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.152 mg.
Bond Pad #1 (Vg1)
Bond Pad #2 (RF)
Bond Pad #3 (Vd1)
Bond Pad #4 (Vd2)
Bond Pad #5 (IF1)
Bond Pad #6 (Vg4)
Bond Pad #7 (LO)
Bond Pad #8 (IF2)
Bond Pad #9 (Vg3)
Bond Pad #10 (Vg2)
Bias Arrangement
Vd1,2
IF1
3 45
RF 2
6 Vg4
7 LO
Bypass Capacitors - See App Note [2]
Vd1,2
Vg4
IF1
RF
LO
1
Vg1,2
10 9 8 R1002
IF2
Vg3
Vg1,2
Vg3
IF2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 10
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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