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Número de pieza | XP1023-BD | |
Descripción | GaAs MMIC Power Amplifier | |
Fabricantes | Mimix Broadband | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de XP1023-BD (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! 24.0-34.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 17-Apr-07
Features
Excellent Saturated Output Stage
16.0 dB Small Signal Gain
+24.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
P1023-BD
Chip Device Layout
XP1023-BD
General Description
Mimix Broadband’s three stage 24.0-34.0 GHz GaAs
MMIC power amplifier has a small signal gain of 16.0
dB with a +24.0 dBm saturated output power.This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This
www.DataSheet4U.com
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
650 mA
+0.3 VDC
+17.0 dBm
-65 to +165 OC
-55 to MTTF Table1
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=6.0V, Vg=-0.9V Typical)
Units Min. Typ. Max.
GHz 24.0 - 34.0
dB - 8.0 -
dB - 8.0 -
dB - 16.0 -
dB - +/-1.0 -
dB - 50.0 -
dBm - +24.0 -
VDC - +6.0 +8.0
VDC -1.0 -0.9 0.1
mA - 320 480
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page 24.0-34.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 17-Apr-07
P1023-BD
Device Schematic
R= 10 Ohm
R= 7.5 Ohm
Vd1
R= 7.5 Ohm
R= 10 Ohm
R= 2.5 Ohm
Vd2
R= 7.5 Ohm
Vd3
R= 15 Ohm
RFIn
R=25 Ohm
3
1
2
4
R= 50 Ohm
R= 50 Ohm
VG1
3
1
2
4
R= 25 Ohm
R= 50 Ohm
R= 50 Ohm
VG2
3
1
2
4
R= 25 Ohm
VG3
R= 50 Ohm
R= 50 Ohm
R= 5 Ohm
RFOut
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet XP1023-BD.PDF ] |
Número de pieza | Descripción | Fabricantes |
XP1023-BD | GaAs MMIC Power Amplifier | Mimix Broadband |
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