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PDF XP1020-BD Data sheet ( Hoja de datos )

Número de pieza XP1020-BD
Descripción GaAs MMIC Power Amplifier
Fabricantes Mimix Broadband 
Logotipo Mimix Broadband Logotipo



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No Preview Available ! XP1020-BD Hoja de datos, Descripción, Manual

11.0-19.0 GHz GaAs MMIC
Power Amplifier
January 2007 - Rev 30-Jan-07
Features
Compact, Low Cost Design
20.0 dB Small Signal Gain
+27.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
P1020-BD
Chip Device Layout
XP1020-BD
General Description
Mimix Broadband’s two stage 11.0-19.0 GHz GaAs
MMIC power amplifier has a small signal gain of
20.0 dB with a +27.0 dBm saturated output power.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
www.DataSheet4U.com
attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
500 mA
+0.3 VDC
+17.0 dBm
-65 to +165 OC
-55 to MTTF Table1
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
Supply Current (Id) (Vd=5.0V, Vg=-0.9V Typical)
Units Min. Typ. Max.
GHz 11.0 - 19.0
dB - 12.0 -
dB - 8.0 -
dB - 20.0 -
dB - +/-1.0 -
dB - 40.0 -
dBm - +27.0 -
VDC - +5.0 +8.0
VDC -1.0 -0.9 0.1
mA - 380 420
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

1 page




XP1020-BD pdf
11.0-19.0 GHz GaAs MMIC
Power Amplifier
January 2007 - Rev 30-Jan-07
Device Schematic
P1020-BD
Typical Application
XU1005
IF IN
2.0 GHz
CMM1118
Sideband
Reject
XP1020
RF Out
14.2-15.35 GHz
LO(+6.0dBm)
12.2-13.35 GHz (USB Operation)
16.2-17.35 GHz (LSB Operation)
Mimix Broadband MMIC-based 11.0-18.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 18.0 GHz)
Mimix Broadband's 11.0-18.0 GHz XU1005 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 16 QAM.The transmitter can be used in upper and lower sideband applications from 11.0-18.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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