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PDF XP1001 Data sheet ( Hoja de datos )

Número de pieza XP1001
Descripción GaAs MMIC Power Amplifier
Fabricantes Mimix Broadband 
Logotipo Mimix Broadband Logotipo



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No Preview Available ! XP1001 Hoja de datos, Descripción, Manual

26.0-40.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
P1001
Features
High Linearity Wideband Amplifier
On-Chip Temperature Compensated
Output Power Detector
Balanced Design Provides Good Input/Output Match
11.0 dB Small Signal Gain
+31.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadbands two stage 26.0-40.0 GHz GaAs MMIC
power amplifier is optimized for linear operation with a third
order intercept point of +31.0 dBm. The device also includes
Lange couplers to achieve good input/output return loss
and an on-chip temperature compensated output power
detector.This MMIC uses Mimix Broadbands 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect and
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provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 Vdc
700 mA
+0.3 Vdc
+14.0 dBm
-65 to +165 OC
-55 to MTTF Table4
MTTF Table 4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T=25oC)
Parameter
Units
Frequency Range (f )
GHz
Input Return Loss (S11)
dB
Output Return Loss (S22)
dB
Small Signal Gain (S21)
dB
Gain Flatness (S21)
dB
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)2
Output Third Order Intercept Point (OIP3)1,2
dB
dBm
dBm
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6K)
Vdc
Gate Bias Voltage (Vg1,2,3,4)
Vdc
Supply Current (Id) (Vd=5.5V, Vg=-0.5V Typical)
Detector (diff ) Output at 20dBm3
mA
Vdc
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vd5=I.0V, or Vd5=5.5V and Rd=5.6K.
Min.
26.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
18.0
18.0
11.0
+/-1.0
40.0
+21.0
+31.0
5.5
-0.5
430
0.28
Max.
40.0
-
-
-
-
-
-
-
5.6
0.0
650
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2004 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

1 page




XP1001 pdf
26.0-40.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
Device Schematic
Vd1
Vg1
RF In
Vd2
Vg2
P1001
RF Out
Vg3
Vd3
Typical Application
Vg4
Vd4
Vout2
Vout1
Vd5
XU1001
IF IN
2 GHz
XB1002
WG
Sideband
Reject
XP1001
RF Out
37.0-39.5 GHz
LO(+15dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
On-Chip
Temp Comp
Detector
Mimix Broadband MMIC-based 36.0-40.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 40 GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2004 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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