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PDF XD1002 Data sheet ( Hoja de datos )
| Número de pieza | XD1002 | |
| Descripción | GaAs MMIC Distributed Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de XD1002 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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0.05-50.0 GHz GaAs MMIC
Distributed Amplifier
August 2005 - Rev 04-Aug-05
Features
Wide Band Driver Amplifier
9.0 dB Small Signal Gain
5.0 dB Noise Figure
15.0 dB Gain Control
+9.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
D1002
General Description
Mimix Broadband’s 0.05-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 9.0 dB
with a noise figure of 5.0 dB across the band.The
device also includes 15.0 dB gain control and a +9.0
dBm P1dB compression point.This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
andwww.DataSheet4U.com provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process.This device is well
suited for microwave, millimeter-wave, wideband
military, and fiber optic applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+10.0 VDC
150 mA
+0.3 VDC
+18 dBm
-65 to +165 OC
-55 to MTTF Table2
MTTF Table 2
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
o
Electrical Characteristics (Ambient Temperature T = 25 C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (ΔS21)
Gain Control
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)1
Drain Bias Voltage (Vd)
Gain Control Bias (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=8.5V, Vg1=0.0V, Vg2=1.0V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
VDC
VDC
VDC
mA
Min.
0.05
-
-
-
-
-
-
-
-
-
-2.0
-
-
Typ.
-
14.0
14.0
9.0
+/-1.5
15.0
40.0
5.0
+9.0
+8.5
0.0
+1.0
120
Max.
50.0
-
-
-
-
-
-
-
-
+9.0
0.1
-
140
(1) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
0.05-50.0 GHz GaAs MMIC
Distributed Amplifier
August 2005 - Rev 04-Aug-05
D1002
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with a single drain and gate
voltage and it also includes a separate gain control voltage. Maximum gain bias is nominally Vd=8.5V, Vg1=0.0V,
Vg2=1.0V, and Id=120mA. Gain can be adjusted by changing Vg1. It is recommended to use active biasing to keep the
currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the
pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed to do this
is 0.0V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg1,2) need to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W E+ E+
C/W E+ E+
C/W E+ E+
Bias Conditions: Vd=8.5V, Id=120 mA
Device Schematic
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet XD1002.PDF ] | |
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