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PDF XB1004 Data sheet ( Hoja de datos )

Número de pieza XB1004
Descripción GaAs MMIC Buffer Amplifier
Fabricantes Mimix Broadband 
Logotipo Mimix Broadband Logotipo



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No Preview Available ! XB1004 Hoja de datos, Descripción, Manual

16.0-30.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Features
High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
2.2 dB Noise Figure at Low Noise Bias
+19.0 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
B1004
General Description
Mimix Broadbands three stage 16.0-30.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0 dB
with a noise figure of 2.2 dB across the band.This MMIC
uses Mimix Broadbands 0.15 µm GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes and
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gold metallization to allow either a conductive epoxy
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
200 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF Table5
MTTF Table5
or eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)3
Output Return Loss (S22)3
Small Signal Gain (S21)3
Gain Flatness (S21)
Reverse Isolation (S12)3
Noise Figure (NF) 4
Output Power for 1 dB Compression (P1dB) 1,2,3
Output Third Order Intercept Point (OIP3)1,2,3
Saturated Output Power (Psat)1,2,3
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1c,2c)
Supply Current (Id) (Vd=4.0V, Vg=-0.3V Typical)
Units Min. Typ. Max.
GHz 16.0 - 30.0
dB 6.0 14.0 -
dB 10.0 14.0
-
dB 18.0 21.0 24.0
dB - +/-1.0 -
dB 40.0 50.0
-
dB - 2.2 3.0
dBm - +19.0 -
dBm - +29.0 -
dBm - +22.0 -
VDC - +4.0 +6.0
VDC -1.2 -0.3 +0.1
mA - 90 180
(1) Optional low noise bias Vd1,2=4.0V, Id=90mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=6.0V, Id1=90mA, Id2=90mA.
(4) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=4.0V, Id1=45mA, Id2=45mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

1 page




XB1004 pdf
16.0-30.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Buffer Amplifier Measurements at Power Bias
B1004
2_0279_R2C2: Pout vs. freq_R2C2
24
22
20
18
16
14
12
10
8
6
4
2
0
16 18 20 22 24 26 28 30 32 34 36
freq (GHz)
2_0279: Pout vs. freq at -10, -3 and 7dBm
24
22
20
18
16
14
12
10
8
6
4
2
0
16 18 20 22 24 26 28 30 32 34 36
freq (GHz)
2_0279_R3C3: OP1dB
OP1dB
22
20
18
16
14
12
10
18 20 22 24 26 28 30 32 34
Freq (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 10
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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