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PDF DMN2004DWK Data sheet ( Hoja de datos )

Número de pieza DMN2004DWK
Descripción DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes Incorporated 
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Product Summary
V(BR)DSS
20V
RDS(on) max
0.55@ VGS = 4.5V
ID
TA = +25°C
540mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Load Switch
DMN2004DWK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
SOT363
D2 G1
S1
ESD PROTECTED TO 2kV
Top View
S2 G2 D1
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN2004DWK-7
Case
SOT363
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
NAB YM
NAB = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
2006
Code
T
Month
Code
Jan
1
2007
U
Feb
2
.
.
Mar
3
DMN2004DWK
Document number: DS30935 Rev. 6 - 2
2013
A
Apr
4
2014
B
May
5
2015
C
Jun
6
2016
D
Jul
7
1 of 6
www.diodes.com
2017
E
Aug
8
2018
F
Sep
9
2019
G
Oct
O
2020
H
Nov
N
2021
I
Dec
D
September 2015
© Diodes Incorporated

1 page




DMN2004DWK pdf
DMN2004DWK
8
6 VDS = 10V
ID = 250mA
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Q g, TOTAL GATE CHARGE (nC)
Figure 13 Gate Charge
10
RD S( o n )
Limited
1
DC
0.1
0.01
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
TJ(m ax) = 150°C
PW = 100µs
TA = 25°C
VGS = 4.5V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14 SOA, Safe Operation Area
100
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
BC
H
K
J
DF
L
M
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
0° 8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2 C2
G
Z
Y
X
C1
Dimensions
Z
G
X
Y
C1
C2
SOT363
2.5
1.3
0.42
0.6
1.9
0.65
DMN2004DWK
Document number: DS30935 Rev. 6 - 2
5 of 6
www.diodes.com
September 2015
© Diodes Incorporated

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