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PDF DRDNB16W Data sheet ( Hoja de datos )
| Número de pieza | DRDNB16W | |
| Descripción | (DRDxxxxW) COMPLEX ARRAY FOR RELAY DRIVERS | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W
DRD (xxxx) W
Features
• Epitaxial Planar Die Construction
• One Transistor and One Switching
Diode in One Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Last
Page
• Ordering Information: See Last Page
• Weight: 0.008 grams (approx.)
Lead-free Green COMPLEX ARRAY FOR RELAY DRIVERS
A
BC
G
H
K
J
D
L
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
M
J 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0° 8°
All Dimensions in mm
P/N
DRDNB16W
DRDPB16W
DRDNB26W
DRDPB26W
R1 (NOM) R2 (NOM)
1K 10K
1K 10K
220 4.7K
220 4.7K
DRDN010W/
DRDN005W
DRDP006W
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
R2
R1
DRDNB16W/
DRDNB26W
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage and Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
200
625
-55 to +150
R2
R1
DRDPB16W/
DRDPB26W
Unit
mW
°C/W
°C
Maximum Ratings, DRDN010W NPN Transistor @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
45
18
5
1000
Unit
V
V
V
mA
Maximum Ratings, DRDN005W NPN Transistor @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
80
80
4.0
500
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http: //www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Unit
V
V
V
mA
DS30573 Rev. 8 - 2
1 of 9
www.diodes.com
DRD (xxxx) W
© Diodes Incorporated
1 page  
Device Characteristics
250 1000
200
150
100
100
50
0
0 100 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
100
f = 1MHz
1
0.0001
VCE = 1.0V
.001 .01
.1
1
IC, COLLECTOR CURRENT (A)
Fig. 2, Typical DC Current Gain vs
Collector Current (DRDN010W)
10
1000
10
1
0.1 1
10 100
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 3, Output Capacitance vs.
Collector-Base Voltage (DRDN010W)
100
10
1
0.0001
.001 .01
.1
1
IC, COLLECTOR CURRENT (A)
Fig. 4, Collector Saturation Voltage vs
Collector Current (DRDN010W)
10
DS30573 Rev. 8 - 2
5 of 9
www.diodes.com
DRD (xxxx) W
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet DRDNB16W.PDF ] | |
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