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PDF LBN150B01 Data sheet ( Hoja de datos )
| Número de pieza | LBN150B01 | |
| Descripción | 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS | |
| Fabricantes | Diodes Incorporated | |
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LBN150B01
150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS
General Description
• LMN150B01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete PNP pass transistor with stable
Vce_sat which does not depend on the input voltage and
can support maximum continuous current of 150 mA up to
125 °C (see fig. 3). It also contains a discrete NPN that can
be used as a control. The component devices can be used
as a part of a circuit or as stand alone discrete devices.
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/ROHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic. "Green Molding"
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL- STD -202, Method 208
• Marking & Type Code Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.016 grams (approximate)
6
5
4
1
2
3
Fig. 1: SOT-26
CQ1
6
EQ2
5
CQ2
4
Q1
PNP_MMST3906
NPN_MMST3904
Q2
1
EQ1
2
BQ1
3
BQ2
Fig. 2: Schematic and Pin Configuration
Sub-Component P/N
MMST3906
MMST3904
Reference
Q1
Q2
Device Type
PNP Transistor
NPN Transistor
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Output Current
Characteristic
Symbol
Iout
Value
150
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 120 °C
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor)
Symbol
Pd
Pder
Tj,Tstg
RθJA
Value
300
2.33
-55 to +150
417
Notes: 1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Page 9.
Figure
2
2
Unit
mA
Unit
mW
mW/°C
°C
°C/W
DS30749 Rev. 3 - 2
1 of 9
www.diodes.com
LBN150B01
© Diodes Incorporated
1 page  
Characteristics of PNP Transistor (Q1):
10,000
1,000
TA= 150°C
TA= 125°C
100
TA= 85°C
TA= 25°C TA= -55°C
10
200
150
100
50
1
0.1
100
10
1
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 4, hFE vs IC
1000
IC/IB = 10
TA= 150°C
TA= 125°C
0.1
0.01
0.1
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.1
TA= 85°C
TA= 25°C
TA= -55°C
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 6, VCE(SAT) vs IC
1000
TA= -55°C
TA= 150°C
TA= 125°C
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 8, VBE (SAT) vs IC
1000
0
0
2 4 6 8 10
VCE, COLLECTOR - EMITTER VOLTAGE (V)
Fig. 5, IC vs VCE
1.4
1.2
1
TA = 25°C
0.8
TA = -55°C
0.6
TA = 85°C
0.4
0.2
TA = 125°C
TA = 150°C
0
0.1
15
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 7, VBE vs IC
1000
12
9
6
CIBO
3
COBO
1
10 12 14 16 18
VR, REVERSE VOLTAGE (V)
Fig. 9, Input/Output Capacitance vs VR
20
DS30749 Rev. 3 - 2
5 of 9
www.diodes.com
LBN150B01
© Diodes Incorporated
5 Page | ||
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| PDF Descargar | [ Datasheet LBN150B01.PDF ] | |
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