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PDF DMN2005LPK Data sheet ( Hoja de datos )

Número de pieza DMN2005LPK
Descripción N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fabricantes Diodes Incorporated 
Logotipo Diodes Incorporated Logotipo



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No Preview Available ! DMN2005LPK Hoja de datos, Descripción, Manual

DMN2005LPK
Lead-free Green N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
UNDER DEVELOPMENT
· Low On-Resistance
· Low Gate Threshold Voltage
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
· Lead Free By Design/RoHS Compliant (Note 2)
· "Green" Device (Note 4)
· ESD Protected Gate
Mechanical Data
· Case: DFN1006-3
· Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals Connections: See Diagram
· Terminals: Finish ¾ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
· Marking: See Last Page
· Ordering & Date Code Information: See Last Page
G
H
BC
A
DN L
K
M
G
D
S
TOP VIEW
Drain
DFN1006-3
Dim Min Max Typ
A 0.95 1.075 1.00
B 0.55 0.675 0.60
C 0.45 0.55 0.50
D 0.20 0.30 0.25
G 0.47 0.53 0.50
H 0 0.05 0.03
K 0.10 0.20 0.15
L 0.20 0.30 0.25
M¾
¾ 0.35
N¾
¾ 0.40
All Dimensions in mm
Gate
Body
Diode
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
ESD protected
Maximum Ratings @ TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current per element (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed (Note 3)
Symbol
VDSS
VGSS
ID
Pd
RqJA
Tj, TSTG
Value
20
±8
200
250
200
625
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width £10mS, Duty Cycle £1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mW
°C/W
°C
DS30836 Rev. 3 - 1
1 of 4
www.diodes.com
DMN2005LPK
ã Diodes Incorporated

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