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Número de pieza | EM584161 | |
Descripción | 256K x 16 Low Power SRAM | |
Fabricantes | Etron Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EM584161 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! EtronTech
EM584161
256K x 16 Low Power SRAM
Rev 2.0 11/2003
Features
• Single power supply voltage of 1.65V to 1.95V
• Power down features using CE1# and CE2
• Low power dissipation
• Data retention supply voltage: 0.9V to 1.95V
• Direct TTL compatibility for all input and output
• Wide operating temperature range: -40°C to 85°C
• Standby current @ VDD = 1.95 V
ISB
Maximum
EM584161BA/BC-70/85
8 µA
EM584161BA-70E/85E
80 µA
Ordering Information
Part Number
EM584161BC-70
EM584161BA-70
EM584161BA-70E
EM584161BC-85
EM584161BA-85
EM584161BA-85E
Speed
70 ns
70 ns
70 ns
85 ns
85 ns
85 ns
ISB
8 µA
8 µA
80 µA
8 µA
8 µA
80 µA
Package
6x8 BGA
8x10 BGA
8x10 BGA
6x8 BGA
8x10 BGA
8x10 BGA
Overview
Pin Configuration
48-Ball BGA (CSP), Top View
12345
6
A LB# OE# A0 A1 A2 CE2
B
DQ8 UB#
A3
A4 CE1# DQ0
C
DQ9 DQ10 A5
A6 DQ1 DQ2
D
GND DQ11 A17 A7
DQ3 VDD
E VDD DQ12 NC A16 DQ4 GND
F DQ14 DQ13 A14 A15 DQ5 DQ6
G DQ15 NC A12 A13 WE# DQ7
H NC A8 A9 A10 A11 NC
Pin Description
Symbol
A0 - A17
DQ0 - DQ15
CE1#, CE2
OE#
WE#
LB#, UB#
GND
VDD
NC
Function
Address Inputs
Data Inputs / Outputs
Chip Enable Inputs
Output Enable
Read / Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit
technology provides both high speed and low power. It is automatically placed in low-power mode when chip
enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are
used to select the device and for data retention control, and output enable (OE#) provides fast memory access.
Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating range from -40°C to 85°C, the EM584161 can be used in environments exhibiting
extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
1 page EtronTech
EM584161
AC Characteristics and Operating Conditions(Ta = -40°C to 85°C, VDD = 1.65V to 1.95V)
Read Cycle
EM584161
Symbol
Parameter
-85 -70 Unit
Min Max Min Max
tRC
tAA
tCO1
tCO2
tOE
tBA
tLZ
tOLZ
tBLZ
tHZ
tOHZ
tBHZ
tOH
Write Cycle
Read cycle time
Address access time
Chip Enable (CE1#) Access Time
Chip Enable (CE2) Access Time
Output enable access time
Data Byte Control Access Time
Chip Enable Low to Output in Low-Z
Output enable Low to Output in Low-Z
Data Byte Control Low to Output in Low-Z
Chip Enable High to Output in High-Z
Output Enable High to Output in High-Z
Data Byte Control High to Output in High-Z
Output Data Hold Time
Symbol
Parameter
85 − 70 −
− 85 − 70
− 85 − 70
− 85 − 70
− 45 − 35
− 45 − 35
10 − 10 −
3−3−
5−5−
− 35 − 25
− 35 − 25
− 35 − 25
10 − 10 −
ns
EM584161
-85 -70
Min Max Min Max
Unit
tWC
tWP
tCW
tBW
tAS
tWR
tWHZ
tOW
tDS
tDH
Write cycle time
Write pulse width
Chip Enable to end of write
Data Byte Control to end of Write
Address setup time
Write Recovery time
WE# Low to Output in High-Z
WE# High to Output in Low-Z
Data Setup Time
Data Hold Time
85 − 70 −
55 − 55 −
70 − 60 −
70 − 60 −
0−0−
0−0−
− 35 − 30
5−5−
35 − 30 −
0−0−
ns
AC Test Condition
• Output load : 30pF + one TTL gate
• Input pulse level : 0.2V, VDD-0.2V
• Timing measurements : 0.5 x VDD
• tR, tF : 5ns
5
Rev 2.0
Nov. 2003
5 Page EtronTech
EM584161
Data Retention Characteristics (Ta = -40°C to 85°C)
Symbol
Parameter
VDR
Data Retention Supply
Voltage
CE1# ≥ VDD - 0.2V, CE2 ≤ 0.2V,
VIN ≥ VDD - 0.2V or VIN ≤ 0.2V
IDR Data Retention Current
VDD = 0.9V, CE1# ≥ VDD - 0.2V,
CE2 ≤ 0.2V, VIN ≥ VDD - 0.2V or
VIN ≤ 0.2V
tSDR Chip Deselect to Data Retention Mode Time
tRDR Recovery Time
CE1# Controlled Data Retention Mode
VDD
1.65V
tSDR
Data Retention Mode
Min
0.9
−
0
tRC
tRDR
Typ Max Unit
− 1.95 V
− 4.0 µA
− − ns
− − ns
1.4V
VDR
CE1#,
LB#/UB#
GND
Note 1
CE2 Controlled Data Retention Mode
VDD
1.65V
CE2
tSDR
Data Retention Mode
VDR
0.4V
GND
Note 2
Note:
1. CE1# ≥ VDD – 0.2V or UB# = LB# ≥ VDD – 0.2V
2. CE2 ≤ 0.2V
tRDR
11
Rev 2.0
Nov. 2003
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet EM584161.PDF ] |
Número de pieza | Descripción | Fabricantes |
EM584161 | 256K x 16 Low Power SRAM | Etron Technology |
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