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PDF EM562081 Data sheet ( Hoja de datos )
| Número de pieza | EM562081 | |
| Descripción | 256K x 8 Low Power SRAM | |
| Fabricantes | Etron Technology | |
| Logotipo |  |
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EtronTech
Features
• Single power supply voltage of 2.7V to 3.6V
• Power down features using CE1# and CE2
• Low operating current : 25mA(max. for 70 ns)
• Maximum Standby current : 10µA at 3.6 V
• Data retention supply voltage: 1.5V to 3.6V
• Direct TTL compatibility for all input and output
• Wide operating temperature range: -40°C to 85°C
• Package type: 36-ball TFBGA, 6x8mm
EM562081
256K x 8 Low Power SRAM
Preliminary, Rev 1.0 7/2001
asserted low. There are three control inputs. CE1# and
CE2 are used to select the device and for data retention
control, and output enable (OE#) provides fast memory
access. Data byte control pin (LB#,UB#) provides lower
and upper byte access. This device is well suited to
various microprocessor system applications where high
speed, low power and battery backup are required. And,
with a guaranteed operating range from -40°C to 85°C,
the EM562081 can be used in environments exhibiting
extreme temperature conditions.
Ordering Information
Part Number
Speed IDDS2
EM562081BC-70 70 ns 10 µA
EM562081BC-85 85 ns 10 µA
Package
6x8 BGA
6x8 BGA
Pin Names
Symbol
A0 - A17
DQ0-DQ7
CE1#,CE2
OE#
WE#
GND
VDD
NC
Function
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Output Enable
Read/Write Control Input
Ground
Power Supply
No Connection
Pin Assignment
1. 36-Ball BGA (CSP), Top View
123456
A A0 A 1 CE 2 A 3 A 6 A 8
B
DQ4 A2 WE# A4
A7 DQ0
C DQ5
NC A5
DQ1
D GND
VDD
E VDD
GND
F DQ6
NC A1 7
DQ2
G
DQ 7 O E#
CE 1# A 1 6
A15
DQ3
H
A9
A1 0
A1 1
A12
A13
A14
Overview
The EM562081 is a 2,097,152-bit SRAM organized as
262,144 words by 8 bits. It is designed with advanced
CMOS technology. This Device operates from a single
2.7V to 3.6V power supply. Advanced circuit
technology provides both high speed and low power. It
is automatically placed in low-power mode when chip
enable (CE1#) is asserted high or (CE2) is
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
1 page  
EtronTech
EM562081
AC Characteristics and Operating Conditions (Ta = -40° C to 85° C, VDD = 2.7V to 3.6V)
Read Cycle
Symbol
Parameter
EM562081
-85 -70
Min Max Min Max
Unit
tRC
tAA
tCO1
tCO2
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
Write Cycle
Read cycle time
Address access time
Chip Enable (CE1#) Access Time
Chip Enable (CE2) Access Time
Output enable access time
Chip Enable Low to Output in Low-Z
Output enable Low to Output in Low-Z
Chip Enable High to Output in High-Z
Output Enable High to Output in High-Z
Output Data Hold Time
Symbol
Parameter
85 − 70 −
− 85 − 70
− 85 − 70
− 85 − 70
− 45 − 35
10 − 10 −
3−3−
− 35 − 25
− 35 − 25
10 − 10 −
ns
EM562081
-85 -70
Unit
Min Max Min Max
tWC
tWP
tCW
tAS
tWR
tWHZ
tOW
tDS
tDH
Write cycle time
Write pulse width
Chip Enable to end of write
Address setup time
Write Recovery time
WE# Low to Output in High-Z
WE# High to Output in Low-Z
Data Setup Time
Data Hold Time
85 − 70 −
55 − 55 −
70 − 60 −
0−0−
0−0−
− 35 − 30
5−5−
35 − 30 −
0−0−
ns
AC Test Condition
• Output load: 50pF + one TTL gate
• Input pulse level: 0.4V, 2.4V
• Timing measurements: 0.5 x VDD
• tR, tF: 5ns
Preliminary
5
Rev 1.0
July 2001
5 Page 
EtronTech
EM562081
Data Retention Characteristics (Ta = -40° C to 85° C)
Symbol
Parameter
VDR
Data Retention Supply
Voltage
CE1# ≥ VDD - 0.2V, CE2 ≤ 0.2V,
VIN ≥ VDD - 0.2V or VIN ≤ 0.2V
IDR Data Retention Current
VDD = 1.5V, CE1# ≥ VDD - 0.2V,
CE2 ≤ 0.2V, VIN ≥ VDD - 0.2V or
VIN ≤ 0.2V
tSDR Chip Deselect to Data Retention Mode Time
tRDR Recovery Time
Min Typ Max Unit
1.5 − 3.6 V
− 0.5 3 µA
0 − − ns
tRC − − ns
CE1# Controlled Data Retention Mode (see Note1)
t S DR
Data Retention Mode
VD D
2. 7V
tRD R
2. 2V
VD R
CE1#
GN D
Note 1
CE2 Controlled Data Retention Mode (see Note2)
VD D
D ata R ete ntio n M od e
2.7 V
CE2
tSD R
VD R
0 .4 V
GND
Note 2
tRDR
Note:
(1) If CE1# controlled data retention mode, minimum standby current mode is entered when CE2 ≤
0.2V or CE2 ≥ VDD - 0.2V.
(2) In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 ≤
0.2V.
Preliminary
11
Rev 1.0
July 2001
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet EM562081.PDF ] | |
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