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PDF 2N7002E Data sheet ( Hoja de datos )
| Número de pieza | 2N7002E | |
| Descripción | N-channel TrenchMOS FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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2N7002E
N-channel TrenchMOS™ FET
Rev. 02 — 26 April 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Logic level threshold compatible
s Surface-mounted package
s Very fast switching
s TrenchMOS™ technology
1.3 Applications
s Logic level translator
s High speed line driver
1.4 Quick reference data
s VDS ≤ 60 V
s RDSon ≤ 3 Ω
s ID ≤ 385 mA
s Ptot = 0.83 W
2. Pinning information
Table 1: Pinning
Pin Description
1 gate (G)
2 source (S)
3 drain (D)
Simplified outline
3
12
SOT23
Symbol
D
G
mbb076 S
1 page  
Philips Semiconductors
2N7002E
N-channel TrenchMOS™ FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
gfs forward transconductance
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
ton turn-on delay time
toff turn-off delay time
Source-drain diode
VSD source-drain (diode forward) voltage
trr reverse recovery time
Qr recovered charge
Conditions
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 48 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±15 V; VDS = 0 V
VGS = 10 V; ID = 500 mA; Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 75 mA; Figure 6 and 8
VDS = 10 V; ID = 200 mA
VGS = 0 V; VDS = 10 V; f = 1 MHz;
Figure 11
VDD = 50 V; RL = 250 Ω; VGS = 10 V;
RG = 50 Ω; RGS = 50 Ω
IS = 300 mA; VGS = 0 V; Figure 12
IS = 300 mA; dIS/dt = −100 A/µs;
VGS = 0 V
Min Typ Max Unit
60 - - V
55 - - V
12
0.6 -
--
3V
-V
3.5 V
-
0.01 1
µA
- - 10 µA
- 10 100 nA
-
2.3 3
Ω
- 4.2 5.55 Ω
-
3.1 4
Ω
100 300 -
- 25 40
- 18 30
- 7.5 10
- 3 10
- 12 15
mS
pF
pF
pF
ns
ns
- 0.85 1.5 V
- 30 - ns
- 30 - nC
9397 750 14944
Product data sheet
Rev. 02 — 26 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 11
5 Page 
Philips Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information . . . . . . . . . . . . . . . . . . . . 10
2N7002E
N-channel TrenchMOS™ FET
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 26 April 2005
Document number: 9397 750 14944
Published in The Netherlands
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet 2N7002E.PDF ] | |
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