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PDF UPG2250T5N Data sheet ( Hoja de datos )

Número de pieza UPG2250T5N
Descripción POWER AMPLIFIER
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GaAs INTEGRATED CIRCUIT
µPG2250T5N
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
DESCRIPTION
The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1.
This device realizes high efficiency, high gain and high output power.
This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able
to high-density surface mounting.
FEATURES
• Operating frequency
: fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)
• Supply voltage
: VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.)
• Control voltage
: Vcont = 1.5 to 2.1 V (1.8 V TYP.)
• Circuit current
: IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm
• Output power
: Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = 5 dBm
• Gain control range
: GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = 5 dBm
• High efficiency
: PAE = 55% TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = 5 dBm
• High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)
www.DataSheet4U.com APPLICATION
• Power Amplifier for Bluetooth Class 1
ORDERING INFORMATION
Part Number
Order Number
Package
µPG2250T5N-E2 µPG2250T5N-E2-A 6-pin plastic TSON
(Pb-Free)
Marking
Supplying Form
G5C
Embossed tape 8 mm wide
Pin 1, 6 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2250T5N-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10639EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
2006

1 page




UPG2250T5N pdf
µPG2250T5N
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Condition : f = 2 450 MHz, VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, with external input and output matching circuits
OUTPUT POWER, GAIN, CIRCUIT CURRENT,
EFFICIENCY vs. INPUT POWER
35 140
30 Gain
25
IDD 120
100
20 80
Pout
15 60
10 PAE 40
5 20
0
–30 –25 –20 –15 –10 –5
Input Power Pin (dBm)
0
0
5
Condition : f = 2 450 MHz, VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, Pin = 5 dBm, with external input and output matching
circuits
OUTPUT POWER, CIRCUIT CURRENT,
EFFICIENCY vs. CONTROL VOLTAGE
30 140
Pout
20
120
10
IDD
0
100
80
–10 PAE 60
–20 40
–30 20
–40
0
0.5 1 1.5 2 2.5
Control Voltage Vcont (V)
0
3
Remark The graphs indicate nominal characteristics.
Data Sheet PG10639EJ01V0DS
5

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UPG2250T5N arduino
µPG2250T5N
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-558-2120 FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.eu.necel.com/
TEL: +49-211-6503-0
FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500
FAX: +1-408-988-0279
Compound Semiconductor Devices Division
NEC Electronics Corporation
URL: http://www.ncsd.necel.com/
0604

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