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PDF IRF540ZSPBF Data sheet ( Hoja de datos )

Número de pieza IRF540ZSPBF
Descripción AUTOMOTIVE MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 95531
AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 26.5m
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRF540Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
www.irf.com
S ID = 36A
D2Pak
IRF540ZS
TO-262
IRF540ZL
Max.
36
25
140
92
0.61
± 20
83
120
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
7/20/04

1 page




IRF540ZSPBF pdf
IRF540Z/S/LPbF
40
30
20
10
0
25
50 75 100 125 150
TJ , Junction Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
3.0
ID = 22A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01 SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5

5 Page





IRF540ZSPBF arduino
TO-262 Package Outline
IRF540Z/S/LPbF
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
E XAMPL E :
T HIS IS AN IRL3103L
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
INT ERNAT IONAL
RE CT IF IE R
L OGO
AS S EMBLY
LOT CODE
OR
INT ERNATIONAL
RE CT IF IE R
LOGO
AS S EMBLY
LOT CODE
www.irf.com
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
PART NUMBER
DATE CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S IT E CODE
11

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