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Número de pieza | IRF4905LPBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRF4905SPbF
IRF4905LPbF
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O 150°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Some Parameters Are Differrent from
IRF4905S
O Lead-Free
Description
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
G
D
HEXFET® Power MOSFET
D VDSS = -55V
RDS(on) = 20mΩ
ID = -42A
S
D
S
GD
D2Pak
IRF4905SPbF
S
GD
TO-262
IRF4905LPbF
Absolute Maximum Ratings
G
Gate
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
ijRθJA Junction-to-Ambient (PCB Mount, steady state)
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D
Drain
S
Source
Max.
-70
-44
-42
-280
170
1.3
± 20
140
790
See Fig.12a, 12b, 15, 16
-55 to + 150
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
0.75
40
Units
1
8/5/05
1 page IRF4905S/L
80
LIMITED BY PACKAGE
60
40
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.0
ID = -42A
VGS = -10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01 0.01
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.1165 0.000068
τ3τ3 0.3734 0.002347
0.2608 0.014811
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
5 Page IRF4905S/L
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
Repetitive rating; pulse width limited by
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11).
avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.16mH This value determined from sample failure population. 100%
RG = 25Ω, IAS = -42A, VGS =-10V. Part not
tested to this value in production.
recommended for use above this value.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
4 or G-10 Material). For recommended footprint and soldering
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/05
www.irf.com
11
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Páginas | Total 11 Páginas | |
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