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PDF FPM2750QFN Data sheet ( Hoja de datos )

Número de pieza FPM2750QFN
Descripción LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
Fabricantes Filtronic 
Logotipo Filtronic Logotipo



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FPM2750QFN
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
Datasheet v2.5
FEATURES:
Balanced low noise amplifier module
Excellent Noise figure: 0.4dB at 1850MHz
Low drive current: 40mA typical (3.0V)
Combined IP3: 36dBm (100mA)
Combined P1dB: 23dBm (100mA)
Small footprint: 4mm x 4mm x 0.9mm QFN
RoHS compliant: (Directive 2002/95/EC)
PACKAGE:
GENERAL DESCRIPTION:
The FPM2750QFN is a packaged pair of
pseudomorphic High Electron Mobility
Transistors (pHEMT) specifically optimised for
balanced configuration systems. The Filtronic
0.25µm process ensures class-leading noise
performance. The use of a small footprint
plastic package allows for a cost effective total
system implementation.
TYPICAL APPLICATIONS:
Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
High intercept-point LNAs
ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated):
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
MAX
UNITS
Noise Figure
Output IP3
in balanced mode
SSG in balanced mode
P1dB in balanced mode
Small Signal Gain
Power at 1dB Gain Compression
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
NF
IP3
SSG
P1dB
SSG
P1dB
IDSS
IMAX
GM
IGSO
|VP|
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
0.4
0.6
32
33 36
18.5
17.5 20
21
21.5 23.5
19.0
19.5
17.5
17.5
185 230 280
375
200
5
0.7 1.0 1.3
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
16
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
16
Thermal Resistance
ΘJC
1W dissipation, case temperature 22°C
124
Note: TAMBIENT = 22°; RF specification measured at f= 1850MHz using CW signal (except as noted).
1
dB
dBm
dB
dBm
dB
dBm
mA
mA
mS
μA
V
V
V
°C/W
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Website: www.filtronic.com

1 page




FPM2750QFN pdf
FPM2750QFN
Datasheet v2.5
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: BALANCED OPERATION
Conditions: Vds = 3V, Ids = 40mA (per device), 50Ω environment and TA = +22 °C unless stated
otherwise. All measurements shown are referenced to evaluation board connectors.
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.70
1.75
1.80 1.85 1.90
Freq (GHz)
1.95
2.00
0
-10
-20
-30
-40
-50
1.0 2.0 3.0 4.0 5.0
Freq (GHz)
0
-10
-20
-30
-40
-50
-60
24
23
22
21
20
19
18
17
16
1.80
1.0 2.0 3.0 4.0 5.0
Freq (GHz)
'-40 °C'
'20 °C'
'80 °C'
1.85 1.90 1.95
Freq (GHz)
2.00
21
20
19
18
17
16
15
14
13
1.80
38
36
34
32
30
28
26
1.80
'-40 °C'
'20 °C'
'80 °C'
1.85 1.90 1.95
Freq (GHz)
2.00
'-40 °C'
'20 °C'
'80 °C'
1.85 1.90 1.95
Freq (GHz)
2.00
Tel: +44 (0) 1325 301111
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Website: www.filtronic.com

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