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PDF FPD1500DFN Data sheet ( Hoja de datos )
| Número de pieza | FPD1500DFN | |
| Descripción | HIGH LINEARITY PACKAGED PHEMTT | |
| Fabricantes | Filtronic | |
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FPD1500DFN
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet v2.1
FEATURES (1850MHZ):
• 27 dBm Output Power (P1dB)
• 18 dB Small-Signal Gain (SSG)
• 1.2 dB Noise Figure
• 42 dBm Output IP3
• 45% Power-Added Efficiency
• RoHS compliant (Directive 2002/95/EC)
PACKAGE:
GENERAL DESCRIPTION:
The FPD1500DFN is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and
offset Gate structure minimizes parasitics to
optimize performance, with an epitaxial
structure designed for improved linearity over
a range of bias conditions and input power
levels.
TYPICAL APPLICATIONS:
• Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
• High intercept-point LNAs
• WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small-Signal Gain
SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN
TYP
27
18
MAX
UNITS
dBm
dB
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
PAE
NF
IP3
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 1.5 mA
IGS = 1.5 mA
IGD = 1.5 mA
45 %
1.2 dB
40 dBm
42
375
465 550
mA
750 mA
400 mS
1 15 μA
0.7 0.9 1.3 V
12 16
V
12 16
V
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page  
TYPICAL I-V CHARACTERISTICS:
FPD1500DFN
Datasheet v2.1
DC IV Curves FPD750SOT89
0.30
0.25
0.20 VG=-1.50
VG=-1.25V
VG=-1.00V
0.15 VG=-0.75V
VG=-0.50V
VG=-0.25V
0.10 VG=0V
0.05
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Drain-Source Voltage (V)
Note: The recommended method for measuring
IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V. This measurement point
avoids the onset of spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above). Setting the VDS > 1.3V will
generally cause errors in the current
measurements, even in stabilized circuits.
Recommendation: Traditionally a device’s IDSS
rating (IDS at VGS = 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation
between IDSS and P1dB (power at 1dB gain
compression). For pHEMTs it can be shown that
there is no meaningful statistical correlation
between IDSS and P1dB; specifically a linear
regression analysis shows r2 < 0.7, and the
regression fails the F-statistic test. IDSS is
sometimes useful as a guide to circuit tuning, since
the S22 does vary with the quiescent operating
point IDS.
Tel: +44 (0) 1325 301111
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
5 Page | ||
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