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PDF FPD1000V Data sheet ( Hoja de datos )

Número de pieza FPD1000V
Descripción 1W POWER PHEMT
Fabricantes Filtronic 
Logotipo Filtronic Logotipo



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No Preview Available ! FPD1000V Hoja de datos, Descripción, Manual

PRELIMINARY
FPD1000V
1W POWER PHEMT
FEATURES (1.8 GHz)
31 dBm Linear Output Power
16 dB Power Gain
Useable Gain to 10 GHz
41 dBm Output IP3
Maximum Stable Gain of 20 dB
50% Power-Added Efficiency
10V Operation / Plated Source Thru-Vias
DRAIN
BOND
PAD (2X)
DESCRIPTION AND APPLICATIONS
GATE
BOND
PAD (2X)
DIE SIZE (µm): 650 x 800
DIE THICKNESS: 75µm
BONDING PADS (µm): >70 x 65
The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The
FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.85 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Power Gain at dB Gain Compression
Maximum Stable Gain
S21/S12
Power-Added Efficiency
at 1dB Gain Compression
3rd-Order Intermodulation Distortion
ΓS and ΓL tuned for Optimum IP3
P1dB
G1dB
MSG
PAE
IM3
VDS = 10V; IDS = 200 mA
30 31
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
14.5 16.0
ΓS and ΓL tuned for Optimum IP3
VDS = 10 V; IDS = 200mA
20
PIN = 0dBm, 50system
VDS = 10V; IDS = 200 mA
50
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
POUT = 19 dBm (single-tone level)
-46
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
ΘCC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
VDS = 1.3 V; IDS = 2.4 mA
IGS = 2.4 mA
IGD = 2.4 mA
See Note on following page
480 650
1100
720
20
0.7 0.9
68
20 22
22
Max
-44
720
50
1.4
Units
dBm
dB
%
dBc
mA
mA
mS
µA
V
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 4/29/05

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