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PDF FPD1000AS Data sheet ( Hoja de datos )
| Número de pieza | FPD1000AS | |
| Descripción | 1W PACKAGED POWER PHEMT | |
| Fabricantes | Filtronic | |
| Logotipo |  |
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FPD1000AS
1W PACKAGED POWER PHEMT
• PERFORMANCE (1.8 GHz)
♦ 31 dBm Output Power (P1dB)
♦ 15 dB Power Gain (G1dB)
♦ 43 dBm Output IP3
♦ -42 dBc WCDMA ACPR at 21 dBm PCH
♦ 10V Operation
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Design Data Available on Website
♦ Suitable for applications to 5 GHz
• DESCRIPTION AND APPLICATIONS
SEE PACKAGE OUTLINE FOR
MARKING CODE
The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Power Gain at dB Gain Compression
Maximum Stable Gain
S21/S12
Power-Added Efficiency
at 1dB Gain Compression
3rd-Order Intermodulation Distortion
ΓS and ΓL tuned for Optimum IP3
P1dB
G1dB
MSG
PAE
IM3
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
VDS = 10 V; IDS = 200mA
PIN = 0dBm, 50Ω system
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
POUT = 19 dBm (single-tone level)
30
13.5
31
15.0
20
50
-46
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
ΘCC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
VDS = 1.3 V; IDS = 2.4 mA
IGS = 2.4 mA
IGD = 2.4 mA
See Note on following page
480 650
1100
720
20
0.7 0.9
68
20 22
25
Max
800
50
1.4
Units
dBm
dB
%
dBc
mA
mA
mS
µA
V
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: [email protected]
1 page  
FPD1000AS
1W PACKAGED POWER PHEMT
IM Products vs. Input Power
-15.00
27.00
-20.00
25.00
23.00
Pout
Im3, dBc
-25.00
-30.00
-35.00
21.00
19.00
-40.00
-45.00
-50.00
17.00
-55.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
Input Power (dBm)
Note: Graph above shows Input and Output power as single carrier or single-tone levels.
FPD1000AS IP3 CONTOURS 1800 MHz
Swp Max
222
48 dBm
46 dBm
44 dBm
42 dBm
40 dBm
3.0
4.0
5.0
10.0
-0.2
NOTE:
IP3 contours
back-off from
Pge1dnBe.raLteodcalwmithaxiPmI-0N.a4
= 11dB
for best
linearity located at:
ΓL = 40 + j55 Ω and ΓL = 113 + j70 Ω
with ΓS = 15 + j12 Ω
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Swp Min
1
Revised: 05/26/05
Email: [email protected]
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FPD1000AS.PDF ] | |
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