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PDF FPD10000AF Data sheet ( Hoja de datos )
| Número de pieza | FPD10000AF | |
| Descripción | 10W PACKAGED POWER PHEMT | |
| Fabricantes | Filtronic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FPD10000AF (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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PRELIMINARY
FPD10000AF
10W PACKAGED POWER PHEMT
• PERFORMANCE (1.8 GHz)
♦ 40 dBm Output Power (P1dB)
♦ 11 dB Power Gain (G1dB)
♦ -44 dBc WCDMA ACPR at 30 dBm output power
♦ 180 to 300 mA typical quiescent current (IDQ)
♦ 55% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Additional Design Data Available on Website
♦ Usable Gain to 3.8GHz
SEE PACKAGE
OUTLINE FOR
MARKING CODE
• DESCRIPTION AND APPLICATIONS
The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-
mount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Class B Operation
P1dB
VDS = 12V; IDQ = 180 mA
40
Power Gain at dB Gain Compression G1dB
Maximum Stable Gain: S21/S12
PIN = 0dBm, 50Ω system
Power-Added Efficiency
at 1dB Gain Compression
Adjacent Channel Power Ratio
WCDMA BTS Forward (64 channels)
MSG
PAE
ACPR
VDS = 12V; IDQ = 180 mA
VDS = 12V; IDQ = 300 mA
VDS = 12 V; IDQ = 180 mA
VDS = 12 V; IDQ = 300 mA
VDS = 12V; IDQ = 180 mA
IRF (drive-up current) ~ 1.5A
VDS = 12V; IDQ = 180 mA
Channel power = 30 dBm
10
11
16.5
18.0
55
-44
10.15 dB Pk/Avg 0.001%
Saturated Drain-Source Current
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
IDSS
IGSO
|VP|
|VBDGD|
ΘCC
VDS = 3.0 V; VGS = 0 V
VGS = -3 V
VDS = 3.0 V; IDS = 19 mA
IGD = 19 mA
See Note on following page
5.2
3
1.1
30 35
3.5
Max
Units
dBm
dB
dB
%
dBc
A
mA
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 12/07/04
Email: [email protected]
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FPD10000AF.PDF ] | |
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