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PDF FMS2014QFN Data sheet ( Hoja de datos )
| Número de pieza | FMS2014QFN | |
| Descripción | High Power GaAs SPDT Switch | |
| Fabricantes | Filtronic | |
| Logotipo |  |
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Preliminary Data Sheet 2.2
FMS2014QFN
High Power GaAs SPDT Switch
Features:
♦ 3x3x0.9mm Packaged pHEMT Switch
♦ Excellent low control voltage performance
♦ Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
♦ Very high Tx-Rx isolation: >28dB typ. at
1.8GHz
♦ Very low Insertion loss: 0.5dB at 1.8GHz
♦ Very low control current
Functional Schematic
ANT
V1 V2
RF1 RF2
Description and Applications:
The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide
antenna switch designed for use in mobile handset applications. The die is fabricated using the
Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for
switch applications. The FMS2014QFN is designed for use in dual/tri and quad band GSM handset
antenna switch modules and RF front-end modules. It can also find use in other applications where
high power and linear RF switching is necessary.
Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω)
Parameter
Test Conditions
Min Typ Max Units
Insertion Loss
Return Loss
Isolation
2nd Harmonic Level
3rd Harmonic Level
Switching speed : Trise, Tfall
Ton, Toff
Control Current
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 2.5 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
+35dBm RF input @1GHz
0.45
0.5
20
-32
-30
-75
-75
-75
-75
<0.3
<10
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
1.0
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
µs
µs
µA
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected]
Website: www.filtronic.com
1 page  
Evaluation Board:
Preliminary Data Sheet 2.2
FMS2014QFN
C5 C6
C1 C2
C3 C4
Label
C3,C4
C1,C2
C5,C6
BOM
Component
Capacitor, 470pF, 0603
Capacitor, 100pF, 0402
Capacitor, 47pF, 0402
BOARD
Preferred evaluation board material is 0.25 mm thick
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.
Evaluation Board De-Embedding Data (Measured):
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.5
FMS2014QFN CAL BOARD INSERTION LOSS
1 1.5 2 2.5
Frequency (GHz)
3
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected]
Website: www.filtronic.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FMS2014QFN.PDF ] | |
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