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PDF FMS2016-001 Data sheet ( Hoja de datos )
| Número de pieza | FMS2016-001 | |
| Descripción | High Power Reflective GaAs SP4T Switch | |
| Fabricantes | Filtronic | |
| Logotipo |  |
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FMS2016-001
High Power Reflective GaAs SP4T Switch
Datasheet v2.4
FEATURES:
• 3x3x0.9mm Packaged pHEMT Switch
• High isolation: >30dB at 1.8GHz
• Low Insertion loss: 0.65dB at 1.8GHz
• Excellent low control voltage performance
• Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
• RoHS Compliant (Directive 2002/95/EC)
GENERAL DESCRIPTION:
The FMS2016-001 is a low loss, high power and
linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset
and other high power switching applications. The
die is fabricated using the Filtronic FL05 0.5μm
switch process technology, which offers excellent
performance optimised for switch applications.
FUNCTIONAL SCHEMATIC:
ANT
RF1 RF2
RF3 RF4
TYPICAL APPLICATIONS:
• Multi-band GSM/DCS/PCS/EDGE handset
modules
• High power and linear RF switching
applications
.
ELECTRICAL SPECIFICATIONS:
Parameter
Insertion Loss
Return Loss
Test Conditions
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 2.5 GHz
Min
16
Isolation
RF1 – RF2, RF1 – RF3, RF2 – RF4
0.5 – 1.0 GHz
1.0 – 2.0 GHz
30
Isolation
RF3 – RF4
2nd Harmonic Level
3rd Harmonic Level
0.5 – 1.0 GHz
1.0 – 2.0 GHz
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
26
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
Control Current
+35dBm RF input @1GHz
0.9 & 0.91 GHz, Pin = +20 dBm
IP3
1.85 & 1.86 GHz, Pin = +20 dBm
Note:
P0.1dB
1.0GHz
2.0GHz
TAMBIENT = 25°C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50Ω
External DC blocking capacitors are required on all RF ports (typ: 47pF)
Typ
0.55
0.65
20
34
32
34
30
-75
-75
-75
-75
<0.3
<10
>68
>66
>38
>37
Max
0.75
0.85
-60
-65
-60
-65
0.5
15
Units
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
μs
μs
μA
dBm
dBm
dBm
dBm
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page  
QFN 12 LEAD 3*3 PACKAGE OUTLINE:
TAPE & REEL SPECIFICATION:
FMS2016-001
Datasheet v2.4
Note: PIN1
Identifier is at
ground potential
TAPE DIMENSIONS
Perforation
Cavity
Distance between centrelines
DESCRIPTION
Diameter
Pitch
Position
Length
Width
Depth
Cavity to Perforation
(length direction)
SYMBOL
D0
P0
E1
A0
B0
K
P2
Carrier tape
Tel: +44 (0) 1325 301111
Cavity to Perforation
(width direction)
F
Width
5
W
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
SIZE (MM)
1.5 ±0.1
4.0 ±0.1
1.75 ±0.1
3.3 ±0.1
3.3 ±0.1
1.1 ±0.1
2.0 ±0.1
5.5 ±0.1
12 ±0.3
Website: www.filtronic.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FMS2016-001.PDF ] | |
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