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PDF FMS2016QFN-1 Data sheet ( Hoja de datos )
| Número de pieza | FMS2016QFN-1 | |
| Descripción | High Power Reflective GaAs SP4T Switch | |
| Fabricantes | Filtronic | |
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Preliminary Data Sheet 2.1
FMS2016QFN-1
High Power Reflective GaAs SP4T Switch
Features:
♦ 3x3x0.9mm Packaged pHEMT Switch
♦ NiPdAu finish for Military and High
reliability applications
♦ Excellent low control voltage performance
♦ Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
♦ Very high isolation: >29dB at 1.8GHz
♦ Very low Insertion loss: 0.65dB at 1.8GHz
♦ Very low control current
Functional Schematic
ANT
RF1 RF2
RF3 RF4
Description and Applications:
The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset applications. The die is fabricated using the
Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for
switch applications. The FMS2016QFN is designed for use in dual/tri and quad band GSM handset
antenna switch modules and RF front-end modules. It can also find use in other applications where
high power and linear RF switching is necessary.
Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω)
Parameter
Test Conditions
Min Typ Max Units
Insertion Loss
Return Loss
Isolation
RF1 – RF3 and RF2 – RF4
Isolation
RF1 – RF2
Isolation
RF3 – RF4
2nd Harmonic Level
3rd Harmonic Level
Switching speed : Trise, Tfall
Ton, Toff
Control Current
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 2.5 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
+35dBm RF input @1GHz
<0.55
<0.65
20
34
32
34
32
34
30
-75
-75
-75
-75
<0.3
<10
1.0
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: [email protected]
Website: www.filtronic.com
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
µs
µs
µA
1 page  
Evaluation Board:
Preliminary Data Sheet 2.1
FMS2016QFN-1
C6 C7
C5
C1
C2
C3 C8 C9 C4
C10 C11 C12 C13
Label
C10, C11, C12,
C13
C1,C2,
C3,C4,C5
C6, C7, C8, C9
BOM
Component
Capacitor, 470pF, 0603
Capacitor, 100pF, 0402
Capacitor, 47pF, 0402
BOARD
Preferred evaluation board material is 0.25 mm thick
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.
Evaluation Board De-Embedding Data (Measured):
FMS2016QFN CALIBRATION BOARD INSERTION LOSS
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
FMS2016QFN CALIBRATION BOARD RETURN LOSS
-15
-20
-25
-30
-35
-40
0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email: [email protected]
Website: www.filtronic.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FMS2016QFN-1.PDF ] | |
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