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PDF FMS2017QFN Data sheet ( Hoja de datos )
| Número de pieza | FMS2017QFN | |
| Descripción | DPDT GaAs Single-Band WLAN Switch | |
| Fabricantes | Filtronic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FMS2017QFN (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Preliminary Data Sheet 2.1
FMS2017QFN
2.4GHz DPDT GaAs Single-Band WLAN Switch
Features:
♦ 3x3x0.9mm Packaged pHEMT Switch
♦ Suitable for Single-band WLAN 802.11b/g
Applications
♦ Excellent low control voltage performance
♦ Very low Insertion loss typ. 0.6dB at 2.5GHz
♦ High isolation typ. 23dB at 2.5GHz
♦ Filtronic Advanced GaAs pHEMT Technology
Functional Schematic
V4
TX / RF1
V3
ANT1
RF3
ANT2
RF4
V1
RX / RF2
V2
Description and Applications:
The FMS2017QFN is a low loss, single band Gallium Arsenide antenna diversity switch designed for
use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5µm switch process
technology that offers leading edge performance, optimised for switch applications.
The FMS2017QFN is designed for use in 802.11b/g WLAN modules.
Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/(2.4V,+3.3V), ZIN = ZOUT = 50Ω)
Parameter
Conditions
Min Typ
Insertion Loss (All Paths)
Isolation (All Paths)
Return Loss
P0.1dB
2nd Harmonic Level
3rd Harmonic Level
Switching speed
2.5GHz, Small Signal
2.5GHz, Small Signal
2.5GHz, Small Signal
2.5GHz Control Voltage 3.0V
2.4GHz, Pin = 32dBm, Vctrl =2.4V
2.4GHz, Pin = 32dBm, Vctrl =2.4V
Vctrl=2.4V, Pin=20dBm
0.6
23
20
>33
-65
-65
20
Note: External DC blocking capacitors are required on all RF ports (typ: 47pF)
All unused ports terminated in 50Ω.
Max
Units
dB
dB
dB
dBm
dBc
dBc
nS
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected]
Website: www.filtronic.co.uk/semis
1 page  
Evaluation Board:
Preliminary Data Sheet 2.1
FMS2017QFN
RF1/TX
V4, GND, V3
RF3/ANT1
C2 C1 C1
C2 C2
C2
C2
C1 C1
C2
C2
C2
RF4/ANT2
V1, GND, V2
RF2/RX
Label
C1
C2
BOARD
BOM
Component
Capacitor, 100pF, 0603
Capacitor, 47pF, 0402
Preferred evaluation board material is 0.25
mm thick ROGERS RT4350. All RF tracks
should be 50 ohm characteristic
impedance. Absolute placement of
surface mount de-coupling capacitors is not
critical.
Evaluation Board De-Embedding Data (Measured):
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.5
FMS2017QFN CAL BOARDS INSERTION LOSS
1 1.5 2 2.5
Frequency (GHz)
3
-15
-17.5
-20
-22.5
-25
-27.5
-30
-32.5
-35
-37.5
-40
-42.5
-45
0.5
FMS2017QFN CAL BOARDS RETURN LOSS
1 1.5 2 2.5
Frequency (GHz)
3
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected]
Website: www.filtronic.co.uk/semis
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FMS2017QFN.PDF ] | |
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