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Número de pieza | FMA3016-QFN | |
Descripción | High Power Amplifier | |
Fabricantes | FILTRONIC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FMA3016-QFN (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FMA3016-QFN
3.5GHz High Power Amplifier for WiMAX applications Preliminary Datasheet v3.1
FEATURES:
• 3.5GHz WiMAX power amplifier
• 17dB gain
• 2.5% EVM with 30dBm transmit power
• 10% PAE with 30dBm transmit power
• 10W Psat
• 20 lead air-cavity QFN with Cu lead
frame
FMA3016-QFN EVALUATION BOARD:
GENERAL DESCRIPTION:
FMA3016-QFN is a high power packaged
MMIC amplifier for 3.5GHz WiMAX
applications. This device exhibits 17dB of
gain, has a Psat of greater than 10W and
2.5% EVM with 10% PAE at 30dB transmit
power with a 64 QAM OFDM signal. The
part is packaged in a 20 lead air-cavity QFN
(8x6x1.4mm) with a copper lead frame for
enhanced thermal performance.
TYPICAL APPLICATIONS:
• WiMAX
• 802.16 Broadband wireless
ELECTRICAL SPECIFICATIONS:
PARAMETER
Frequency Range
CONDITIONS
Gain
Gain variation over
temperature
Input Return Loss
Output Return Loss
EVM @30dBm transmit
power
PAE @30dBm transmit
power
Output power at P1dB
Output IP3
-40 to +85 deg C
Base Plate Temperature
OFDM signal
OFDM signal
CW conditions
CW conditions
ACP @30dBm Pout
Noise Figure
Stability
VD1, VD2
VG1, VG2
7MHz BW, Adjacent Channel Power measured
in a 1MHz BW, offset by 7.5MHz from the
centre frequency
Unconditional across all frequencies with
appropriate decoupling networks
Class AB to obtain optimum linearity
MIN
3.4
9
8
-1.2
TYP
17
± 1.5
12
10
10
38
50
-52
MAX
3.6
UNITS
GHz
dB
dB
dB
dB
2.5 %
%
dBm
dBm
dBc
10 dB
10 V
-0.5 V
IDS 1.2 A
Tel: +44 (0) 1325 301111
1
Preliminary Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page EVALUATION BOARD COMPONENT LAYOUT:
VG1 VD1VG2 VD2
FMA3016-QFN
Preliminary Datasheet v2.1
Vg1
10uF
100pF
Vd1 Vg2 Vd2
10uF
10uF
10uF
100pF
100pF
100pF
100pF
VD1 VG2 VD2
PORT
P=1
Z=50 O hm
M LI N
ID =T L1
W =Ca p_ Int er um
L =1 500 u m
M SUB=" M SUB1"
100pF
100pF
ML IN
ID=TL 2
W=Cap _In ter u m
L= 150 0 um
MSUB= "M SUB1"
PORT
P=2
Z= 50 Oh m
100pF
10uF
Vd1
10uF
Vg2
10uF
Vd2
BILL OF MATERIALS:
LABEL
Board
P6, P7
P1, P2,
P3, P4,
P5
C1, C2,
C3, C4,
C5, C6,
C7, C8,
C9,
C10,C11,
C12,C13,
C14,C15,
C16,C17,
C18, C19
Q1
COMPONENT
Preferred evaluation board material is 30-mil thick ROGERS RT4350. All RF tracks should be 50-ohm
characteristic material
SMA RF edge connector
DC connector
Capacitor, 10uF, 0603
Capacitor, 100pF, 0603
FMA3016-QFN
Tel: +44 (0) 1325 301111
5
Preliminary Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FMA3016-QFN.PDF ] |
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