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PDF XD010-24S-D2F Data sheet ( Hoja de datos )
| Número de pieza | XD010-24S-D2F | |
| Descripción | Class A/AB 12W CDMA Driver Amplifier | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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Product Description
Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2-
stage Class A/AB amplifier module for use in the driver stages of CDMA
RF power amplifiers. The power transistors are fabricated using Sirenza’s
latest, high performance LDMOS process. This unit operates from a single
voltage and has internal temperature compensation of the bias voltage to
ensure consistant performance over the full temperature range. It is inter-
nally matched to 50 ohms.
XD010-24S-D2F
1930-1990 MHz Class A/AB
12W CDMA Driver Amplifier
Functional Block Diagram
Stage 1
Stage 2
Temperature
Compensation
12
RF in
VD1
Temperature
Compensation
34
5
VD2 RF out
Product Features
• 50 W RF impedance
• 12W Output P1dB
• Single Supply Operation : Nominally 28V
• High Gain: 28 dB at 1960 MHz
• High Efficiency: 26% at 1960 MHz
• Advanced, XeMOS LDMOS II FETS
• Temperature Compensation
Applications
• Base Station PA driver
• Repeater
• CDMA
• GSM / EDGE
Case Flange = Ground
Key Specifications
Symbol
Parameter
Unit
Frequency
Frequency of Operation
MHz
P1dB
Gain
Output Power at 1dB Compression
Gain at 1W Output Power
W
dB
Gain Flatness
Peak to Peak Gain Variation, 1930-1990MHz
dB
IRL Input Return Loss 1W Output Power, 1930-1990MHz dB
Drain Efficiency at 10W CW output
%
Efficiency
Drain Efficiency at 2W CDMA (Single Carrier IS-95, 9 Ch Fwd)
%
Drain Efficiency at 1W CDMA (Single Carrier IS-95, 9 Ch Fwd)
%
ACPR at 1W CDMA Power Output (Single Carrier IS-95, 9 Ch
Fwd, Offset=750KHz, ACPR Integrated Bandwidth)
dB
Linearity
ALT-1 at 2W CDMA (Single Carrier IS-95, 9 Ch Fwd,
Offset=1980 KHz, ACPR Integrated Bandwidth)
3rd Order IMD at 10W PEP (Two Tone; 1MHz)
dB
dBc
Delay
Signal Delay from Pin 1 to Pin 5
nS
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
RTH, j-l
RTH, j-2
Thermal Resistance Stage 1 (Junction to Case)
Thermal Resistance Stage 2 (Junction to Case)
ºC/W
ºC/W
Test Conditions: Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230mA, IDQ2 = 150mA, TFlange = 25ºC
Min.
1930
10
26
10
20
-27
Typ.
12
28
0.4
14
26
12
6.5
-58
-70
-32
2.9
0.5
11
4
Max.
1990
1.0
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-102932 Rev C
1 page  
Package Outline Drawing
XD010-24S-D2F 1930-1990 MHz 12W Power Amp Module
Recommended PCB Cutout and Landing Pads for the D2F Package
Note 3: Dimensions are in inches
Refer to Application note AN-060 “Installation Instructions for XD Module Series” for additional mounting info. App note availbale at at www.sirenza.com
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-102932 Rev C
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet XD010-24S-D2F.PDF ] | |
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