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PDF KSC900 Data sheet ( Hoja de datos )
| Número de pieza | KSC900 | |
| Descripción | Low Frequency & Low Noise Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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KSC900
Low Frequency & Low Noise Amplifier
• Collector-Base Voltage : VCBO=30V
• Low Noise Level : NL=50mV (MAX)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1 TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
25
5
50
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
NL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Noise Level
IC=100µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=3V, IC=0.5mA
IC=20mA, IB=2mA
VCE=3V, IC=0.5mA
VCE=3V, IC=1mA
VCC=12V, IC=0.1mA
RS=25kΩ
AV=80dB, f=1KHz
Min.
30
25
5
120
Typ.
0.1
0.62
100
30
Max.
50
100
1000
0.2
0.7
50
Units
V
V
V
nA
nA
V
V
MHz
mV
hFE Classification
Classification
hFE
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
V
600 ~ 1000
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC900.PDF ] | |
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