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PDF KSC2500 Data sheet ( Hoja de datos )
| Número de pieza | KSC2500 | |
| Descripción | Medium Power Amplifier & Low Saturation | |
| Fabricantes | Fairchild Semiconductor | |
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KSC2500
Medium Power Amplifier & Low Saturation
1 TO-92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤30%
Ratings
30
30
10
6
2
5
0.5
900
150
-55 ~ 150
Units
V
V
V
V
A
A
A
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
BVCBO
BVEBO
hFE 1
hFE 2
VCE (sat)
VBE (on)
fT
Cob
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
VCB=30V, IE=0
VEB=6V, IC=0
IC=10mA, IB=0
IE=1mA, IC=0
VCE=1V, IC=0.5A
VCE=1V, IC=2A
IC=2A, IB=50mA
VCE=1V, IC=2A
VCE=1V, IC=0.5A
VCB=10V, IE=0, f=1MHz
Min.
10
6
140
70
Typ.
200
0.2
0.86
150
27
Max.
100
100
600
Units
nA
nA
V
V
0.5 V
1.5 V
MHz
pF
hFE1 Classification
Classification
hFE1
A
140 ~ 240
B
200 ~ 330
C
300 ~ 450
D
420 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC2500.PDF ] | |
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